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Semiconductor device and method for manufacturing the same

  • US 9,012,904 B2
  • Filed: 03/16/2012
  • Issued: 04/21/2015
  • Est. Priority Date: 03/25/2011
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a gate electrode;

    forming a hydrogen capture film over the gate electrode;

    forming a hydrogen permeable film over the hydrogen capture film;

    forming an oxide semiconductor film over the hydrogen permeable film; and

    releasing hydrogen from the oxide semiconductor film by performing heat treatment,wherein a material of the hydrogen capture film is different from a material of the hydrogen permeable film, andwherein a nitrogen concentration in the hydrogen capture film is higher than or equal to 0.01 atomic % and lower than 7 atomic %.

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