Semiconductor device and method for manufacturing the same
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode;
forming a hydrogen capture film over the gate electrode;
forming a hydrogen permeable film over the hydrogen capture film;
forming an oxide semiconductor film over the hydrogen permeable film; and
releasing hydrogen from the oxide semiconductor film by performing heat treatment,wherein a material of the hydrogen capture film is different from a material of the hydrogen permeable film, andwherein a nitrogen concentration in the hydrogen capture film is higher than or equal to 0.01 atomic % and lower than 7 atomic %.
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Abstract
In the transistor including an oxide semiconductor film, a gate insulating film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film, and the hydrogen capture film is formed on a side which is in contact with a gate electrode. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.
165 Citations
20 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode; forming a hydrogen capture film over the gate electrode; forming a hydrogen permeable film over the hydrogen capture film; forming an oxide semiconductor film over the hydrogen permeable film; and releasing hydrogen from the oxide semiconductor film by performing heat treatment, wherein a material of the hydrogen capture film is different from a material of the hydrogen permeable film, and wherein a nitrogen concentration in the hydrogen capture film is higher than or equal to 0.01 atomic % and lower than 7 atomic %. - View Dependent Claims (2, 3, 4, 5, 13, 14)
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6. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film; forming a hydrogen permeable film over the oxide semiconductor film; forming a hydrogen capture film over the hydrogen permeable film; releasing hydrogen from the oxide semiconductor film by performing heat treatment; and forming a gate electrode over the hydrogen capture film, wherein a material of the hydrogen capture film is different from a material of the hydrogen permeable film, and wherein a nitrogen concentration in the hydrogen capture film is higher than or equal to 0.01 atomic % and lower than 7 atomic %. - View Dependent Claims (7, 8, 9, 15, 16, 17, 20)
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10. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode; forming a first film over the gate electrode; forming a second film over the first film; forming an oxide semiconductor film over the second film; and transferring hydrogen from the oxide semiconductor film to the first film through the second film by performing heat treatment, wherein a material of the first film is different from a material of the second film, and wherein a nitrogen concentration in the first film is higher than or equal to 0.01 atomic % and lower than 7 atomic %. - View Dependent Claims (11, 12, 18, 19)
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Specification