Semiconductor device with metal oxide film
First Claim
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1. A semiconductor device comprising:
- a gate electrode;
an oxide semiconductor film including a channel formation region;
a gate insulating film between the gate electrode and the oxide semiconductor film;
a source electrode and a drain electrode over the oxide semiconductor film; and
a metal oxide film over the oxide semiconductor film, the source electrode and the drain electrode,wherein the metal oxide film is in contact with part of the oxide semiconductor film,wherein the oxide semiconductor film contains indium, gallium and zinc,wherein the metal oxide film contains gallium and indium, andwherein a concentration of indium in the metal oxide film is 0.01 at. % to 5 at. %.
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Abstract
In a transistor including an oxide semiconductor film, a metal oxide film which has a function of preventing 1 electrification and covers a source electrode and a drain electrode is formed in contact with the oxide semiconductor film, and then, heat treatment is performed. Through the heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor film, whereby the oxide semiconductor film is highly purified. By providing the metal oxide film, generation of a parasitic channel on the back channel side of the oxide semiconductor film in the transistor is prevented.
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Citations
16 Claims
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1. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film including a channel formation region; a gate insulating film between the gate electrode and the oxide semiconductor film; a source electrode and a drain electrode over the oxide semiconductor film; and a metal oxide film over the oxide semiconductor film, the source electrode and the drain electrode, wherein the metal oxide film is in contact with part of the oxide semiconductor film, wherein the oxide semiconductor film contains indium, gallium and zinc, wherein the metal oxide film contains gallium and indium, and wherein a concentration of indium in the metal oxide film is 0.01 at. % to 5 at. %. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film including a channel formation region; a gate insulating film between the gate electrode and the oxide semiconductor film; a source electrode and a drain electrode over the oxide semiconductor film; and a metal oxide film over the oxide semiconductor film, the source electrode and the drain electrode, wherein the metal oxide film is in contact with part of the oxide semiconductor film, wherein the oxide semiconductor film contains indium, gallium and zinc, wherein the metal oxide film contains gallium and zinc, and wherein a concentration of zinc in the metal oxide film is 0.01 at. % to 5 at. %. - View Dependent Claims (6, 7, 8)
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9. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film including a channel formation region; a gate insulating film between the gate electrode and the oxide semiconductor film; a source electrode and a drain electrode over the oxide semiconductor film; and a metal oxide film over the oxide semiconductor film, the source electrode and the drain electrode, wherein the metal oxide film is in contact with part of the oxide semiconductor film, wherein the oxide semiconductor film contains indium and gallium, wherein the metal oxide film contains gallium and indium, wherein a concentration of indium in the metal oxide film is different from a concentration of indium in the oxide semiconductor film, and wherein the concentration of indium in the metal oxide film is 0.01 at. % to 5 at. %. - View Dependent Claims (10, 11, 12)
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13. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film including a channel formation region; a gate insulating film between the gate electrode and the oxide semiconductor film; a source electrode and a drain electrode over the oxide semiconductor film; and a metal oxide film over the oxide semiconductor film, the source electrode and the drain electrode, wherein the metal oxide film is in contact with part of the oxide semiconductor film, wherein the oxide semiconductor film contains gallium and zinc, wherein the metal oxide film contains gallium and zinc, wherein a concentration of zinc in the metal oxide film is different from a concentration of zinc in the oxide semiconductor film, and wherein the concentration of zinc in the metal oxide film is 0.01 at. % to 5 at. %. - View Dependent Claims (14, 15, 16)
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Specification