Light emitting devices having light coupling layers

• US 9,012,921 B2
• Filed: 09/29/2011
• Issued: 04/21/2015
• Est. Priority Date: 09/29/2011
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Lin, Chao-Kun, Yan, Li, Chuang, Chih-Wei
• Primary Examiner(s): NGUYEN, THANH T
• Application Number:
  US13/249,184
• Publication Number:
  US 20130082280A1
• Time in Patent Office: 1,300 Days
• Field of Search: 257 98- 99
• US Class Current: 257/77
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling layer is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling layer is formed by roughening a buffer layer of the light emitting device. The light emitting device includes an electrode in electrical communication with one of the first layer and the second layer through a portion of the light coupling layer.

Claims

1. A light emitting device, comprising:

a substrate;

a p-type Group III-V semiconductor layer adjacent to the substrate;

an active layer adjacent to the p-type Group III-V semiconductor layer;

an n-type Group III-V semiconductor layer adjacent to the active layer;

a light coupling structure adjacent to the n-type Group III-V semiconductor layer, the light coupling structure having one or more Group III-V semiconductor materials, the light coupling structure having a corrugated surface comprising u-type gallium nitride; and

an electrode in electrical communication with the n-type semiconductor layer, the electrode formed on a top surface of the corrugated surface of the light coupling structure and contacting the u-type gallium nitride of the corrugated surface.

2. The light emitting device of claim 1, wherein the one or more Group III-V semiconductor materials of the light coupling structure are selected from the group consisting of n-type gallium nitride, u-type gallium nitride, aluminum gallium nitride and aluminum nitride.

3. The light emitting device of claim 1, wherein the n-type Group III-V semiconductor layer comprises n-type gallium nitride.

4. The light emitting device of claim 1, wherein the p-type Group III-V semiconductor layer comprises p-type gallium nitride.

5. The light emitting device of claim 1, wherein the light coupling structure comprises one or more light coupling protrusions, an individual light coupling protrusion having a decreasing width along an axis oriented away from the active layer.

6. The light emitting device of claim 1, wherein the substrate is selected from the group consisting of silicon, germanium, silicon oxide, silicon dioxide, titanium oxide, titanium dioxide, sapphire, silicon carbide, a ceramic material and a metallic material.

7. The light emitting device of claim 1, wherein the light coupling structure has a corrugation greater than or equal to about 100 nm.

8. The light emitting device of claim 1, wherein the light coupling structure has a thickness between about 100 nanometers and 2 micrometers.

9. The light emitting device of claim 1, further comprising an optical reflector between the substrate and the p-type Group III-V semiconductor layer.

10. The light emitting device of claim 1, wherein the light coupling structure comprises a first layer and a second layer, the first layer formed between the second layer and the n-type Group III-V semiconductor layer, the first layer and the second layer constituting the corrugated surface.

11. The light emitting device of claim 10, wherein the first layer comprises a material selected from the group consisting of n-type gallium nitride, u-type gallium nitride, aluminum gallium nitride and aluminum nitride.

12. The light emitting device of claim 10, wherein the second layer comprises a material selected from the group consisting of u-type gallium nitride, aluminum gallium nitride and aluminum nitride.

13. The light emitting device of claim 10, wherein the n-type Group III-V semiconductor layer comprises n-type gallium nitride and the first layer comprises n-type gallium nitride.

14. The light emitting device of claim 10, wherein the first layer comprises n-type gallium nitride and the second layer comprises u-type gallium nitride.

15. The light emitting device of claim 10, wherein the first layer comprises n-type gallium nitride and the second layer comprises aluminum gallium nitride or aluminum nitride.

16. The light emitting device of claim 10, wherein the first layer comprises aluminum gallium nitride and the second layer comprises aluminum nitride.

17. The light emitting device of claim 10, wherein the light coupling structure further comprises a third layer, the second layer formed between the third layer and the first layer, the first layer, the second layer and the third layer constituting the corrugated surface.

18. The light emitting device of claim 17, wherein the third layer comprises aluminum gallium nitride or aluminum nitride.

19. The light emitting device of claim 1, wherein the light coupling structure couples light from the n-type semiconductor layer to a medium external to the light coupling structure.

20. The light emitting device of claim 1, wherein a portion of the light coupling structure is formed from the n-type Group III-V semiconductor layer.

21. A light emitting device, comprising:

a first layer of a first conductivity type semiconductor material and a second layer of a second conductivity type semiconductor material;

an active layer between the first layer and the second layer;

a light coupling layer adjacent to the second layer, the light coupling layer comprising a third layer of u-type gallium nitride and having a corrugated surface including the third layer of u-type gallium nitride, wherein a portion of the light coupling layer is formed from the second layer; and

an electrode in electrical communication with the second layer, the electrode formed on a top surface of the corrugated surface of the light coupling layer and contacting the third layer of u-type gallium nitride.

22. The light emitting device of claim 21, wherein the light coupling layer further includes a layer of a material selected from the group consisting of u-type gallium nitride, aluminum gallium nitride and aluminum nitride.

23. The light emitting device of claim 21, wherein the light coupling layer further includes at least one layer of aluminum-containing Group III-V semiconductor material.

24. The light emitting device of claim 21, wherein the light coupling layer further comprises a layer of the second conductivity type semiconductor material.

25. The light emitting device of claim 21, further comprising a substrate adjacent to the first layer.

26. The light emitting device of claim 25, wherein the substrate is selected from the group consisting of silicon, germanium, silicon oxide, silicon dioxide, titanium oxide, titanium dioxide, sapphire, silicon carbide, a ceramic material and a metallic material.

27. The light emitting device of claim 21, wherein the light coupling layer has a corrugation greater than or equal to about 100 nm.

28. The light emitting device of claim 21, wherein a portion of the light coupling layer is formed from the second layer.

29. The light emitting device of claim 21, wherein the light coupling layer further comprises a fourth layer of n-type gallium nitride, the fourth layer formed between the third layer and the second layer, the third layer and the fourth layer constituting the corrugated surface.

30. The light emitting device of claim 29, wherein the light coupling layer further comprises a fifth layer of aluminum-containing Group III-V semiconductor material, the third layer formed between the fourth layer and the fifth layer, the third layer, the fourth layer and the fifth layer constituting the corrugated surface.