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N-type gallium-nitride layer having multiple conductive intervening layers

  • US 9,012,939 B2
  • Filed: 08/02/2011
  • Issued: 04/21/2015
  • Est. Priority Date: 08/02/2011
  • Status: Active Grant
First Claim
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1. A Light Emitting Diode (LED) device for emitting non-monochromatic light, the LED device comprising:

  • an n-type layer that comprises a plurality of periods including a plurality of gallium-nitride (GaN) sublayers and a plurality of aluminum-gallium-nitride doped with silicon (AlGaN;

    Si) intervening sublayers, each of the AlGaN;

    Si intervening sublayers sandwiched by the gallium-nitride (GaN) sublayers, the gallium-nitride (GaN) sublayers located at top and bottom of the period, respectively;

    a p-type layer;

    an active layer disposed between the n-type layer and the p-type layer, wherein the active layer includes an amount of indium;

    a conductive carrier;

    a first electrode; and

    a second electrode adapted to conduct a current, wherein the current flows from the second electrode, through the p-type layer, through the active layer, through the n-type layer, and to the first electrode thereby causing the non-monochromatic light to be emitted.

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