Light emitting diode device, light emitting apparatus and method of manufacturing light emitting diode device

• US 9,012,941 B2
• Filed: 04/09/2013
• Issued: 04/21/2015
• Est. Priority Date: 10/13/2009
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Park, Jung Kyu
• Primary Examiner(s): CAMPBELL, SHAUN M
• Application Number:
  US13/859,461
• Publication Number:
  US 20130292726A1
• Time in Patent Office: 742 Days
• Field of Search: 257/98, 257/E33.068, 438/25, 438/28, 438/116
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Provided is a light emitting diode device. The light emitting diode device includes a light emitting diode chip having a first surface on which first and second electrodes are disposed, and a second surface opposing the first surface, a wavelength conversion portion including fluorescent substances and covering the first surface and side surfaces of the light emitting diode chip, wherein the side surfaces denote surfaces placed between the first and second surfaces, and first and second electricity connection portions each including a plating layer, respectively connected to the first and second electrodes, and exposed to the outside of the wavelength conversion portion. Accordingly, the light emitting diode device, capable of enhancing luminous efficiency and realizing uniform product characteristics in terms of the emission of white light, is provided. Further, a process for easily and efficiently manufacturing the above light emitting diode device is provided.

Claims

1. A light emitting diode device, comprising:

a light emitting diode chip having a first surface on which first and second electrodes are disposed, and a second surface opposing the first surface;

a wavelength conversion portion including fluorescent substances and covering the first surface and side surfaces of the light emitting diode chip, the side surfaces being placed between the first and second surfaces; and

first and second electricity connection portions, each including a plating layer, respectively connected to the first and second electrodes, and exposed to the outside of the wavelength conversion portion, wherein;

a first region of the wavelength conversion portion covering the first surface of the light emitting diode chip includes the fluorescent substances,

a second region of the wavelength conversion portion covering the side surfaces of the light emitting diode chip is free of the fluorescent substances,

all of the side surfaces of the first and second electricity connection portions are surrounded by the first region of the wavelength conversion portion,

the first region of the wavelength conversion portion is formed directly on the first surface of the light emitting diode chip, and

the second region of the wavelength conversion portion covers an entire side surface of the light emitting diode chip.

2. The light emitting diode device of claim 1, wherein the wavelength conversion portion is absent on the second surface of the light emitting diode chip.

3. The light emitting diode device of claim 1, wherein:

a third region of the wavelength conversion portion includes an underfill resin portion placed on the first surface of the light emitting diode chip and surrounding side surfaces of the first and second electrodes, and

the third region is free of the fluorescent substances.

4. The light emitting diode device of claim 1, wherein:

the wavelength conversion portion includes an underfill resin portion, and

the underfill resin portion is free of the fluorescent substrates.

5. The light emitting diode device of claim 1, wherein:

the wavelength conversion portion includes an underfill resin portion comprising the same resin as a resin of the second region of the wavelength conversion portion covering the side surfaces of the light emitting diode chip.

6. A light emitting apparatus, comprising:

a chip mounting portion including first and second conductors to allow for the application of power thereto from the outside; and

a light emitting diode device, comprising;

a light emitting diode chip having a first surface on which first and second electrodes are disposed, and a second surface opposing the first surface,

a wavelength conversion portion including fluorescent substances and covering the first surface and side surfaces of the light emitting diode chip, the side surfaces being placed between the first and second surfaces,

first and second electricity connection portions, each including a plating layer, respectively connected to the first and second electrodes, and exposed to the outside of the wavelength conversion portion, and

wires connecting the first and second electricity connection portions to the first and second conductors, respectively, wherein;

a first region of the wavelength conversion portion covering the first surface of the light emitting diode chip includes the fluorescent substances,

a second region of the wavelength conversion portion covering the side surfaces of the light emitting diode chip is free of the fluorescent substances,

all of the side surfaces of the first and second electricity connection portions are surrounded by the first region of the wavelength conversion portion,

the first region of the wavelength conversion portion is formed directly on the first surface of the light emitting diode chip, and

the second region of the wavelength conversion portion covers an entire side surface of the light emitting diode chip.

7. The light emitting apparatus of claim 6, wherein the light emitting diode device is disposed such that the second surface faces the chip mounting portion.

8. The light emitting apparatus of claim 6, wherein the chip mounting portion is a circuit board.