Light emitting device, light emitting device package and illumination system for reducing dislocation in semiconductor layer

• US 9,012,944 B2
• Filed: 08/16/2013
• Issued: 04/21/2015
• Est. Priority Date: 01/19/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Yoon, Ho Sang, Shim, Sang Kyun
• Primary Examiner(s): Jung, Michael
• Application Number:
  US13/968,599
• Publication Number:
  US 20130334550A1
• Time in Patent Office: 613 Days
• Field of Search: None
• US Class Current: 257/98
• CPC Class Codes: F21K 9/23 Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
• CPC Class Codes: F21Y 2105/10 comprising a two-dimensional array of point-like light-generating elements
• CPC Class Codes: F21Y 2113/13 comprising an assembly of point-like light sources
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer.

Claims

1. A light emitting device, comprising:

a first semiconductor layer;

a plurality of convex structures disposed on a top surface of the first semiconductor layer;

a first uneven layer on a top surface of the plurality of convex structures;

a nonconductive layer between the top surface of the plurality of convex structures and the first uneven layer; and

a light emitting structure layer disposed on a top surface of the first uneven layer, the light emitting structure layer including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer on the active layer,

wherein the nonconductive layer includes a contact portion contacted directly with the top surface of the plurality of convex structures,

wherein the nonconductive layer is formed of a different material from the plurality of convex structures and the first uneven layer,

wherein the first uneven layer is formed of a different material from the plurality of convex structures,

wherein the plurality of convex structures are disposed in a discontinuous structure on the top surface of the first semiconductor layer, and

wherein the nonconductive layer includes at least one selected from a group of MgN, SiN, and ZnN.

2. The light emitting device according to claim 1, wherein the plurality of convex structures are formed of a III-V compound semiconductor.

3. The light emitting device according to claim 1, wherein the nonconductive layer is disposed between the plurality of convex structures.

4. The light emitting device according to claim 1, wherein the nonconductive layer is formed of a plurality of clusters spaced apart from each other.

5. The light emitting device according to claim 1, wherein the nonconductive layer includes a metal nitride.

6. The light emitting device according to claim 1, wherein the first uneven layer is formed of a conductive layer.

7. The light emitting device according to claim 1, wherein the first uneven layer is formed of an insulating layer.

8. The light emitting device according to claim 1, wherein the first uneven layer includes material whose lattice constant difference with nitride-based semiconductor is equal to or lower than about 5%.

9. The light emitting device according to claim 1, wherein the first uneven layer includes an n-type dopant.

10. A light emitting device, comprising:

a first semiconductor layer;

a plurality of convex structures disposed on a top surface of the first semiconductor layer;

a first uneven layer on a top surface of the plurality of convex structures;

a nonconductive layer between the top surface of the plurality of convex structures and the first uneven layer; and

a light emitting structure layer disposed on a top surface of the first uneven layer, the light emitting structure layer including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer on the active layer,

wherein the nonconductive layer includes a contact portion contacted directly with the top surface of the plurality of convex structures,

wherein the nonconductive layer is formed of a different material from the plurality of convex structures and the first uneven layer,

wherein the first uneven layer is formed of a different material from the plurality of convex structures,

wherein the first uneven layer includes a carbon-containing material or a silicon-containing material, and

wherein the nonconductive layer includes at least one selected from a group of MgN, SiN, and ZnN and the first uneven layer includes at least one of SiC, SiN, SiCN, and CN.

11. A light emitting device, comprising:

a first semiconductor layer;

a plurality of convex structures disposed on a top surface of the first semiconductor layer;

a first uneven layer on a top surface of the plurality of convex structures;

a nonconductive layer between the top surface of the plurality of convex structures and the first uneven layer; and

a light emitting structure layer disposed on a top surface of the first uneven layer, the light emitting structure layer including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer on the active layer,

wherein the nonconductive layer includes a contact portion contacted directly with the top surface of the plurality of convex structures,

wherein the nonconductive layer is formed of a different material from the plurality of convex structures and the first uneven layer,

wherein the first uneven layer is formed of a different material from the plurality of convex structures,

wherein the plurality of convex structures are disposed in a discontinuous structure on the top surface of the first semiconductor layer, and

wherein the first conductive semiconductor layer has a dislocation density lower than that of the first semiconductor layer.

12. A light emitting device, comprising:

a first semiconductor layer;

a plurality of convex structures disposed on a top surface of the first semiconductor layer;

a first uneven layer on a top surface of the plurality of convex structures;

a nonconductive layer between the top surface of the plurality of convex structures and the first uneven layer;

a light emitting structure layer disposed on a top surface of the first uneven layer, the light emitting structure layer including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer on the active layer; and

a substrate under a lower surface of the first semiconductor layer and a second semiconductor layer between the first semiconductor layer and the substrate,

wherein the nonconductive layer includes a contact portion contacted directly with the top surface of the plurality of convex structures,

wherein the nonconductive layer is formed of a different material from the plurality of convex structures and the first uneven layer,

wherein the first uneven layer is formed of a different material from the plurality of convex structures, and

wherein the plurality of convex structures are disposed in a discontinuous structure on the top surface of the first semiconductor layer.

13. A light emitting device, comprising:

a first semiconductor layer,

a plurality of convex structures on the first semiconductor layer;

a first uneven layer on a top surface of the plurality of convex structures;

a nonconductive layer between the top surface of the plurality of convex structures and the first uneven layer; and

a light emitting structure layer disposed on a top surface of the first uneven layer, the light emitting structure layer including a first conductive semiconductor layer including an n-type dopant, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer including a p-type dopant on the active layer,

wherein the plurality of convex structures is disposed between the first semiconductor layer and the first uneven layer,

wherein the nonconductive layer is formed of a different material from the plurality of convex structures and the first uneven layer,

wherein a portion of the nonconductive layer and a portion of the first uneven layer are disposed between the plurality of convex structures,

wherein a portion of the first uneven layer contacts the plurality of convex structures and a side surface of the non-conductive layer, and

wherein the nonconductive layer includes at least one selected from a group of MgN, SiN, and ZnN.

14. The light emitting device according to claim 13, wherein the plurality of convex structures are formed of a group III-V compound semiconductor and are disposed in a discontinuous structure on a flat top surface of the first semiconductor layer.

15. The light emitting device according to claim 13, wherein the nonconductive layer is formed of a cluster having a metal nitride.

16. The light emitting device according to claim 13, wherein the first uneven layer includes at least one of SiC, SiN, SiCN, and CN.

17. The light emitting device according to claim 13, wherein the nonconductive layer has a recess on the plurality of convex structures and the portion of the first uneven layer is disposed in the recess of the nonconductive layer.