Stress-generating shallow trench isolation structure having dual composition

• US 9,013,001 B2
• Filed: 07/22/2013
• Issued: 04/21/2015
• Est. Priority Date: 11/15/2007
• Status: Active Grant

• Current Assignee: Marvell Asia Pte Limited (Marvell Technology Group Limited)
• Original Assignee: International Business Machines Corporation
• Inventors: Zhu, Huilong, Wang, Jing
• Primary Examiner(s): Lam, Cathy N
• Application Number:
  US13/947,677
• Publication Number:
  US 20130307077A1
• Time in Patent Office: 638 Days
• Field of Search: 257/369, 257/368, 257/510, 257/351, 257/E23.002, 257/E21.546
• US Class Current: 257/369
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264
• CPC Class Codes: H01L 21/823807 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
• CPC Class Codes: H01L 21/823878 isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
• CPC Class Codes: H01L 27/092 complementary MIS field-effect transistors
• CPC Class Codes: H01L 29/7846 the means being located in the lateral device isolation region, e.g. STI
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A shallow trench isolation structure containing a first shallow trench isolation portion comprising the first shallow trench material and a second shallow trench isolation portion comprising the second shallow trench material is provided. A first biaxial stress on at least one first active area and a second bidirectional stress on at least one second active area are manipulated separately to enhance charge carrier mobility in middle portions of the at least one first and second active areas by selection of the first and second shallow trench materials as well as adjusting the type of the shallow trench isolation material that each portion of the at least one first active area and the at least one second active area laterally abut.

Claims

1. A semiconductor structure comprising:

a first active area and a second active area, each comprising a semiconductor material and located in a semiconductor substrate and disjoined from each other;

a first shallow trench isolation portion laterally abutting lengthwise sidewalls and widthwise sidewalls of end portions of said first active area and laterally abutting lengthwise sidewalls of a middle portion of said second active area; and

a second shallow trench isolation portion laterally abutting lengthwise sidewalls and widthwise sidewalls of end portions of said second active area and laterally abutting lengthwise sidewalls of a middle portion of said first active area.

2. The semiconductor structure of claim 1, wherein said first shallow trench isolation portion applies a first type of stress to said lengthwise sidewalls and said widthwise sidewalls of said end portions of said first active area and said lengthwise sidewalls of said middle portion of said second active area, and wherein said second shallow trench isolation portion applies a second type of stress to said lengthwise sidewalls and said widthwise sidewalls of said end portions of said second active area and said lengthwise sidewalls of said middle portion of said first active area, and wherein one of said first and second types is compressive and the other of said first and second types is tensile.

3. The semiconductor structure of claim 1, wherein said first shallow trench isolation portion and said second shallow trench isolation portion collectively enhance electron mobility along a lengthwise direction of said first active area and a hole mobility along a lengthwise direction of said second active area.

4. The semiconductor structure of claim 1, wherein said first shallow trench isolation portion comprises a tensile-stress-generating material and said second shallow trench isolation portion comprises a compressive-stress-generating material.

5. The semiconductor structure of claim 4, wherein said tensile-stress-generating material is a tensile-stress-generating silicon nitride, and wherein said compressive-stress-generating material is a compressive-stress-generating silicon nitride.

6. The semiconductor structure of claim 1, wherein said first shallow trench isolation portion comprises a compressive-stress-generating material and said second shallow trench isolation portion comprises a tensile-stress-generating material.

7. The semiconductor structure of claim 6, wherein said tensile-stress-generating material is a tensile-stress-generating silicon nitride, and wherein said compressive-stress-generating material is a compressive-stress-generating silicon nitride.

8. The semiconductor structure of claim 1, further comprising:

a first gate dielectric and a first gate electrode located on said first active area; and

a second gate dielectric and a second gate electrode located on said second active area.

9. The semiconductor structure of claim 8, further comprising:

a first channel located in said first active area and vertically abutting said first gate dielectric, wherein said first shallow trench isolation portion and said second shallow trench isolation portion apply a first longitudinal stress along a lengthwise direction in said first channel and a first transverse stress along a widthwise direction of said first channel; and

a second channel located in said second active area and vertically abutting said second gate dielectric, wherein said first shallow trench isolation portion and said second shallow trench isolation portion apply a second longitudinal stress along a lengthwise direction in said second channel and a second transverse stress along a widthwise direction of said second channel.

10. The semiconductor structure of claim 8, wherein one of said first longitudinal stress and said second longitudinal stress is compressive, and wherein the other of said first longitudinal stress and said second longitudinal stress is tensile, and wherein said first transverse stress and said second transverse stress are both compressive or both tensile.

11. The semiconductor structure of claim 1, wherein the first and second active areas comprise a single crystalline semiconductor material.

12. The semiconductor structure of claim 1, wherein the first active area is a first portion of a top semiconductor layer of a semiconductor-on-insulator (SOI) substrate, and the second active area is a second portion of the top semiconductor layer of the semiconductor-on-insulator (SOI) substrate.

13. The semiconductor structure of claim 1, wherein said first active area is a first portion of a bulk semiconductor substrate, and the second active area is a second portion of the bulk semiconductor substrate.

14. The semiconductor structure of claim 1, wherein said first shallow trench isolation portion and each of said second shallow trench isolation portions have substantially the same depth.

15. The semiconductor structure of claim 1, the second shallow trench isolation portion comprises two disjoined second shallow trench isolation sub-portions, each of which laterally abuts the first shallow trench isolation portion.