Nanopore sensor device

• US 9,013,010 B2
• Filed: 08/29/2013
• Issued: 04/21/2015
• Est. Priority Date: 01/03/2013
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Chang, Josephine B., Guillorn, Michael A., Joseph, Eric A., Papa Rao, Satyavolu S.
• Primary Examiner(s): Landau, Matthew
• Assistant Examiner(s): Anya, Igwe U
• Application Number:
  US14/013,598
• Publication Number:
  US 20140183668A1
• Time in Patent Office: 600 Days
• Field of Search: 257/414
• US Class Current: 257/414
• CPC Class Codes: B01L 3/502707 characterised by the manufacture of the container or its components by shaping or joining plastic parts B29C59/00, B29C65/00; by laminating B32B37/00; manufacture of microstructural devices in general B81C
• CPC Class Codes: G01N 33/48721 Investigating individual macromolecules, e.g. by translocation through nanopores Coulter counters in general G01N15/12; fabrication methods for nanoscale apertures B81B1/00; sequencing of nucleic acids C12Q1/68
• CPC Class Codes: G01N 33/54373 involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
• CPC Class Codes: H01L 29/66 Types of semiconductor device ; Multistep manufacturing processes therefor
• CPC Class Codes: H01L 29/66007 Multistep manufacturing processes

Abstract

A pair of electrode plates can be provided by directional deposition and patterning of a conductive material on sidewalls of a template structure on a first dielectric layer. An electrode line straddling the center portion is formed. A dielectric spacer and a conformal conductive layer are subsequently formed. Peripheral electrodes laterally spaced from the electrode line are formed by pattering the conformal conductive layer. After deposition of a second dielectric material layer that encapsulates the template structure, the template structure is removed to provide a cavity that passes through the pair of electrode plates, the electrode line, and the peripheral electrodes. A nanoscale sensor thus formed can electrically characterize a nanoscale string by passing the nanoscale string through the cavity while electrical measurements are performed employing the various electrodes.

Claims

1. A sensor structure comprising:

a first dielectric material layer and a second dielectric material layer in contact with each other at a planar interface, wherein a cavity is embedded within said second dielectric material layer and located above said first dielectric material layer;

an electrode line embedded within said second dielectric material layer and straddling said cavity, wherein first portions of said electrode line are in contact with a surface of said first dielectric material layer, and a second portion of said electrode line that is not in contact with said first dielectric material layer is spaced from a plane including said interface by a uniform distance; and

a dielectric spacer laterally surrounding said electrode line, wherein first portions of said dielectric spacer are in contact with said first dielectric material layer, and a second portion of said dielectric spacer that is not in contact with said first dielectric material layer is spaced from said plane including said interface by said uniform distance.

2. The sensor structure of claim 1, further comprising peripheral electrodes laterally spaced from said electrode line by said dielectric spacer.

3. The sensor structure of claim 2, wherein each of said peripheral electrodes includes:

first portions that are in contact with first dielectric material layer; and

a second portion that is not in contact with said first dielectric material layer, and is spaced from said plane including said interface by said uniform distance.

4. The sensor structure of claim 2, wherein said peripheral electrodes are in contact with outer sidewalls of said dielectric spacer.

5. The sensor structure of claim 2, wherein a portion of said dielectric spacer is spaced farther away from said first dielectric material layer than any portion of said peripheral electrodes.

6. The sensor structure of claim 2, wherein a portion of each of said peripheral electrodes has an L-shaped vertical cross-sectional shape.

7. The sensor structure of claim 2, further comprising a dielectric fill material portion in contact with a top surface of said electrode line, outer sidewalls of said dielectric spacer, and top surfaces of peripheral electrodes.

8. The sensor structure of claim 7, wherein sidewalls of said dielectric fill material portion are in contact with said second dielectric material layer, and are substantially vertical.

9. A sensor structure comprising:

a first dielectric material layer and a second dielectric material layer in contact with each other at a planar interface, wherein a cavity is embedded within said second dielectric material layer and located above said first dielectric material layer; and

an electrode line embedded within said second dielectric material layer and straddling said cavity, wherein first portions of said electrode line are in contact with a surface of said first dielectric material layer, and a second portion of said electrode line that is not in contact with said first dielectric material layer is spaced from a plane including said interface by a uniform distance,

wherein a vertical distance a top surface and a bottom surface of a first portion of said electrode line in contact with said first dielectric material layer is the same as a vertical distance between a top surface and a bottom surface of a second portion of said electrode line overlying said cavity.

10. The sensor structure of claim 9, further comprising a dielectric spacer laterally surrounding said electrode line, wherein first portions of said dielectric spacer are in contact with said first dielectric material layer, and a second portion of said dielectric spacer that is not in contact with said first dielectric material layer is spaced from said plane including said interface by said uniform distance.

11. The sensor structure of claim 10, further comprising peripheral electrodes laterally spaced from said electrode line by said dielectric spacer, and wherein each of said peripheral electrodes includes:

first portions that are in contact with first dielectric material layer; and

a second portion that is not in contact with said first dielectric material layer, and is spaced from said plane including said interface by said uniform distance.

12. The sensor structure of claim 11, wherein said peripheral electrodes are in contact with outer sidewalls of said dielectric spacer, and wherein a portion of said dielectric spacer is spaced farther away from said first dielectric material layer than any portion of said peripheral electrodes.

13. The sensor structure of claim 11, further comprising a dielectric fill material portion in contact with a top surface of said electrode line, outer sidewalls of said dielectric spacer, and top surfaces of peripheral electrodes, wherein sidewalls of said dielectric fill material portion are in contact with said second dielectric material layer, and are substantially vertical.

14. The sensor structure of claim 9, wherein said cavity comprises:

a uniform width cavity portion having a uniform width throughout;

a first tapered cavity portion adjoined to said uniform width cavity portion at a proximal end thereof and having a first variable width that increases with distance from said uniform width cavity portion; and

a second tapered cavity portion adjoined to said uniform width cavity portion at a proximal end thereof and having a second variable width that increases with distance from said uniform width cavity portion.

15. A sensor structure comprising:

a first dielectric material layer and a second dielectric material layer in contact with each other at a planar interface, wherein a cavity is embedded within said second dielectric material layer and located above said first dielectric material layer; and

an electrode line embedded within said second dielectric material layer and straddling said cavity, wherein first portions of said electrode line are in contact with a surface of said first dielectric material layer, and a second portion of said electrode line that is not in contact with said first dielectric material layer is spaced from a plane including said interface by a uniform distance,

wherein said cavity comprises;

a uniform width cavity portion having a uniform width throughout;

a first tapered cavity portion adjoined to said uniform width cavity portion at a proximal end thereof and having a first variable width that increases with distance from said uniform width cavity portion; and

a second tapered cavity portion adjoined to said uniform width cavity portion at a proximal end thereof and having a second variable width that increases with distance from said uniform width cavity portion.

16. The sensor structure of claim 15, wherein said uniform width cavity portion, said first tapered cavity portion, and said second tapered cavity portion have a same height.

17. The sensor structure of claim 15, further comprising a dielectric spacer laterally surrounding said electrode line, wherein first portions of said dielectric spacer are in contact with said first dielectric material layer, and a second portion of said dielectric spacer that is not in contact with said first dielectric material layer is spaced from said plane including said interface by said uniform distance.

18. The sensor structure of claim 17, further comprising peripheral electrodes laterally spaced from said electrode line by said dielectric spacer, wherein each of said peripheral electrodes includes:

first portions that are in contact with first dielectric material layer; and

a second portion that is not in contact with said first dielectric material layer, and is spaced from said plane including said interface by said uniform distance.

19. The sensor structure of claim 18, wherein said peripheral electrodes are in contact with outer sidewalls of said dielectric spacer, and wherein a portion of said dielectric spacer is spaced farther away from said first dielectric material layer than any portion of said peripheral electrodes.

20. The sensor structure of claim 18, further comprising a dielectric fill material portion in contact with a top surface of said electrode line, outer sidewalls of said dielectric spacer, and top surfaces of peripheral electrodes, wherein sidewalls of said dielectric fill material portion are in contact with said second dielectric material layer, and are substantially vertical.