RF filter for an active medical device (AMD) for handling high RF power induced in an associated implanted lead from an external RF field

• US 9,014,808 B2
• Filed: 02/23/2014
• Issued: 04/21/2015
• Est. Priority Date: 03/01/2011
• Status: Active Grant

• Current Assignee: Greatbatch Limited (Greatbatch Incorporated)
• Original Assignee: Greatbatch Limited (Greatbatch Incorporated)
• Inventors: Stevenson, Robert A., Frysz, Christine A., Woods, Jason, Johnson, Robert S., Frustaci, Dominick J., Seitz, Keith W., Marzano, Thomas, Roberts, John E., Thiebolt, William C., Williams, Christopher M., Truex, Buehl E., Brendel, Richard L., Dabney, Warren S.
• Primary Examiner(s): Layno, Carl H
• Assistant Examiner(s): PIATESKI, ERIN M
• Application Number:
  US14/187,297
• Publication Number:
  US 20140168850A1
• Time in Patent Office: 422 Days
• Field of Search: 607/36
• US Class Current: 607/36
• CPC Class Codes: A61N 1/05 for implantation or insertion into the body, e.g. heart electrode A61N1/06 takes precedence
• CPC Class Codes: A61N 1/3718 Monitoring of or protection against external electromagnetic fields or currents
• CPC Class Codes: A61N 1/3754 Feedthroughs
• CPC Class Codes: H01G 4/35 Feed-through capacitors or anti-noise capacitors
• CPC Class Codes: H03H 1/0007 of radio frequency interference filters

Abstract

An RF filter for an active medical device (AMD), for handling RF power induced in an associated lead from an external RF field at a selected MRI frequency or range frequencies includes a capacitor having a capacitance of between 100 and 10,000 picofarads, and a temperature stable dielectric having a dielectric constant of 200 or less and a temperature coefficient of capacitance (TCC) within the range of plus 400 to minus 7112 parts per million per degree centigrade. The capacitor'"'"'s dielectric loss tangent in ohms is less than five percent of the capacitor'"'"'s equivalent series resistance (ESR) at the selected MRI RF frequency or range of frequencies.

Claims

1. An EMI broadband lowpass filtered hermetically sealed feedthrough assembly for an active implantable medical device, the feedthrough assembly including at least one capacitor configured for handling high power by a low equivalent series resistance (ESR), the feedthrough assembly comprising:

a) a conductive ferrule;

b) an insulator hermetically sealed to the conductive ferrule;

c) a conductor hermetically sealed and disposed through the insulator between a body fluid side and a device side and in a non-conductive relation with the conductive ferrule;

d) a broadband lowpass capacitor disposed on the device side and configured to be installed inside an electromagnetically shielded and hermetic conductive housing of an active implantable medical device, the capacitor comprising a first and second end metallization, wherein the first end metallization is connected to at least ten active electrode plates and wherein the second end metallization is connected to at least ten ground electrode plates, wherein the at least ten active electrode plates are interleaved and disposed parallel to the at least ten ground electrode plates in a capacitor dielectric, wherein the capacitor dielectric has a dielectric constant of less than 200;

e) an active electrical connection electrically coupling the first end metallization to the conductor; and

f) a ground electrical connection electrically coupling the second end metallization to the conductive ferrule;

g) wherein the capacitor comprises;

i) a temperature coefficient of capacitance between plus 400 to minus 7112 parts per million per degree centigrade (ppm/°

C);

ii) a capacitance of between 10 and 20,000 picofarads;

iii) wherein ESR is the sum of a dielectric loss plus an ohmic loss, and the capacitor comprises a dielectric loss tangent measured in ohms at an MRI RF pulsed frequency or range of frequencies that is less than five percent of the capacitor'"'"'s ESR; and

iv) wherein the capacitor'"'"'s ESR at the MRI RF pulsed frequency or range of frequencies is less than 2.0 ohms; and

h) wherein the conductive ferrule is configured to be disposed into an opening of the housing for an active implantable medical device.

2. The feedthrough assembly of claim 1, wherein the MRI RF pulsed frequency or range of frequencies comprises 64 MHz or 128 MHz.

3. The feedthrough assembly of claim 1, wherein the capacitance is between 350 and 10,000 picofarads.

4. The feedthrough assembly of claim 1, wherein capacitor'"'"'s ESR at the MRI RF pulsed frequency or frequencies is less than 0.5 ohms.

5. The feedthrough assembly of claim 1, wherein the capacitor'"'"'s ESR at the MRI RF pulsed frequency or range of frequencies is less than 0.1 ohms.

6. The feedthrough assembly of claim 1, wherein the dielectric constant is less than 90.

7. The feedthrough assembly of claim 1, wherein the dielectric constant is less than 60.

8. The feedthrough assembly of claim 1, including an insulative washer between the capacitor and the insulator.

9. The feedthrough assembly of claim 1, wherein the second electrical connection comprises a noble metal oxide-resistant attachment.

10. The feedthrough assembly of claim 9, wherein the noble metal, oxide-resistant attachment comprises a gold braze.

11. The feedthrough assembly of claim 1, wherein the capacitor is selected from the group consisting of a monolithic ceramic capacitor, a flat-through capacitor, a chip capacitor, an X2Y attenuator, and a feedthrough capacitor.

12. The feedthrough assembly of claim 11, including a circuit board disposed on the device side, wherein the capacitor is mounted to the circuit board and the circuit board is mounted to the ferrule.

13. The feedthrough assembly of claim 1, wherein the capacitor comprises an element of a multielement broadband lowpass filter having at least one inductor, the multielement broadband lowpass filter forming one of the group consisting of an L filter, a reverse L filter, an LL, a reverse LL, a T, a Pi, and an n-element lowpass filter.

14. The feedthrough assembly of claim 1, wherein the ferrule comprises titanium.

15. A feedthrough assembly, comprising:

a) a conductive ferrule configured to be disposed into an opening of a conductive housing for an active implantable medical device, the ferrule comprising a ferrule sidewall providing a inner ferrule surface, the ferrule sidewall extending from a device side ferrule end to a body-fluid ferrule end;

b) an insulator of electrically non-conductive material comprising an insulator sidewall having an outer insulator surface extending from a device side insulator end to a body-fluid insulator end, wherein the insulator has at least one terminal pin passageway extending through and to the device side and body-fluid insulator ends and wherein the outer insulator surface is hermetically sealed to the inner ferrule surface;

c) a conductor hermetically sealed and disposed through the insulator passageway in a non-conductive relation with the conductive ferrule, wherein the conductor has a length extending outwardly beyond the body-fluid insulator end and the device side insulator end;

d) a capacitor as a passive component lowpass filter disposed on the device side ferrule end, the capacitor comprising;

i) a dielectric body supporting at least ten active electrode plates interleaved with at least ten ground electrode plates;

ii) an active metallization electrically connected to the at least ten active electrode plates;

iii) a ground metallization electrically connected to the at least ten ground electrode plates,

iv) wherein the dielectric has a dielectric constant less than 200;

e) a first electrical pathway electrically coupling the active metallization to the conductor; and

f) a second electrical pathway electrically coupling the ground metallization to the conductive ferrule or the housing of the active implantable medical device; and

g) wherein the capacitor is configured for diverting MRI RF pulsed frequency signals induced on the conductor through a low equivalent series resistance (ESR) connection to a housing for an active implantable medical device, the capacitor comprising;

i) a temperature coefficient of capacitance between plus 400 to minus 7112 parts per million per degree centigrade (ppm/°

C);

ii) a capacitance of between 10 and 20,000 picofarads;

iii) wherein ESB is the sum of a dielectric loss plus an ohmic loss, and the capacitor comprises a dielectric loss tangent measured in ohms at an MRI RF pulsed frequency or range of frequencies that is less than five percent of the capacitor'"'"'s ESR; and

iv) wherein the capacitor'"'"'s ESR at the MRI RF pulsed frequency or range of frequencies is less than 2.0 ohms.

16. The feedthrough assembly of claim 15, wherein the MRI RF pulsed frequency or range of frequencies comprises 64 MHz or 128 MHz.

17. The feedthrough assembly of claim 15, wherein the capacitance is between 350 and 10,000 picofarads.

18. The feedthrough assembly of claim 15, wherein the capacitor'"'"'s equivalent series resistance (ESR) at the MRI RF pulsed frequency or range of frequencies is less than 0.5 ohms.

19. The feedthrough assembly of claim 15, wherein the capacitor'"'"'s equivalent series resistance (ESR) at the MRI RF pulsed frequency or range of frequencies is less than 0.1 ohms.

20. The feedthrough assembly of claim 15, wherein the dielectric constant is less than 90.

21. The feedthrough assembly of claim 15, wherein the capacitor is selected from the group consisting of a monolithic ceramic capacitor, a flat-through capacitor, a multi-element flat through diverter capacitor, a chip capacitor, an X2Y attenuator, and a feedthrough capacitor.

22. The feedthrough assembly of claim 15, wherein the capacitor comprises an element of a multielement broadband lowpass filter having at least one inductor, the multielement broadband lowpass filter forming one of the group consisting of an L filter, a reverse L filter, an LL, a reverse LL, a T, a Pi, and an n-element lowpass filter.

23. A filter feedthrough assembly, comprising:

a) a feedthrough, comprising;

i) a ferrule of an electrically conductive material comprising a ferrule opening defined by a ferrule sidewall having an inner perimeter ferrule surface, wherein the inner perimeter ferrule surface extends from an inboard ferrule end to a body-fluid ferrule end and wherein the ferrule is configured for mounting in an opening in a housing for an active implantable medical device;

ii) an insulator of electrically non-conductive material comprising an outer perimeter insulator surface extending from an inboard insulator end to a body-fluid insulator end, wherein the insulator has at least one conductor passageway extending through and to the inboard and body-fluid insulator ends, and wherein the outer perimeter insulator surface is hermetically sealed to the inner ferrule surface defining the ferrule opening; and

iii) a conductor disposed in the conductor passageway and hermetically sealed to the insulator, wherein the conductor is in a non-conductive relation with the ferrule, and wherein the conductor extends from an inboard conductor end to a body-fluid conductor end with the opposed inboard and body-fluid conductor ends being spaced from the respective inboard and body-fluid insulator ends;

b) a broadband lowpass filter capacitor configured for diverting MRI RF pulsed frequency signals induced on the conductor through a low equivalent series resistance (ESR) connection to a housing for an active implantable medical device, the filter capacitor comprising;

i) a dielectric body supporting at least ten active electrode plates interleaved with at least ten ground electrode plates;

ii) a first metallization electrically connected to the conductor and to the at least ten active electrode plates; and

iii) a second metallization electrically connected to the at least ten ground electrode plates; and

iv) a thermal-setting conductive material electrically connecting the second metallization to;

the inboard ferrule end, the inner perimeter ferrule surface adjacent to the inboard ferrule end, or both; and

c) wherein the broadband lowpass filter capacitor has;

i) a dielectric constant for the dielectric body of less than 200;

ii) a temperature coefficient of capacitance between plus 400 to minus 7112 parts per million per degree centigrade (ppm/°

C);

iii) a capacitance of between 10 and 20,000 picofarads;

iv) wherein ESR is the sum of the dielectric loss plus an ohmic loss, and the capacitor comprises a dielectric loss tangent measured in ohms at an MRI RF pulsed frequency or range of frequencies that is less than five percent of the capacitor'"'"'s ESR; and

v) wherein the capacitor'"'"'s ESR at an MRI RF pulsed frequency or range of frequencies is less than 2.0 ohms.

24. The filter feedthrough assembly of claim 23, wherein the capacitor'"'"'s ESR at the MRI RF pulsed frequency or range of frequencies is less than 0.1 ohms.

25. The filter feedthrough assembly of claim 23, wherein the capacitor is selected from the group consisting of a monolithic ceramic capacitor, a flat-through capacitor, a multi-element flat through diverter capacitor, a chip capacitor, an X2Y attenuator, and a feedthrough capacitor.

26. The filter feedthrough assembly of claim 23, wherein the thermal-setting conductive material electrically contacts a noble metal, oxide-resistant attachment supported on the inboard end surface of the ferrule.

27. The filter feedthrough assembly of claim 26, wherein the oxide-resistant attachment comprises a gold braze.

28. The filter feedthrough assembly of claim 23 wherein the thermal-setting conductive material is selected from the group consisting of conductive polyimide, solder paste, solder preform, and braze preform.

29. A filter feedthrough assembly, comprising:

a) a feedthrough, comprising;

i) a ferrule of an electrically conductive material comprising a ferrule opening defined by a ferrule sidewall having an inner perimeter ferrule surface, wherein the inner ferrule surface extends from an inboard ferrule end to a body-fluid ferrule end and wherein the ferrule is configured for mounting in an opening in a housing for an active implantable medical device;

ii) an insulator of electrically non-conductive material comprising an outer perimeter insulator surface extending from an inboard insulator end to a body-fluid insulator end, wherein the insulator has at least one conductor passageway extending through and to the inboard and body-fluid insulator ends, and wherein the outer perimeter insulator surface is hermetically sealed to the inner ferrule surface defining the ferrule opening; and

iii) a conductor hermetically disposed through the conductor passageway and hermetically sealed to the insulator, wherein the conductor is in a non-conductive relation with the conductive ferrule, and wherein the conductor extends from an inboard conductor end to a body-fluid conductor end with the opposed inboard and body-fluid conductor ends being spaced from the respective inboard and body-fluid insulator ends;

b) a filter capacitor, comprising;

i) a dielectric body supporting at least ten active electrode plates interleaved with at least ten ground electrode plates;

ii) an inside perimeter metallization electrically connected to the conductor and to the at least ten active electrode plates;

iii) an outside perimeter metallization electrically connected to the at least ten ground electrode plates; and

iv) an electrically conductive material connecting the outside perimeter metallization to;

the inboard ferrule end, the inner perimeter ferrule surface adjacent to the inboard ferrule end, or both; and

c) wherein the filter capacitor has;

i) a dielectric constant for the dielectric body of less than 200;

ii) a temperature coefficient of capacitance between plus 400 to minus 7112 parts per million per degree centigrade (ppm/°

C);

iii) a capacitance of between 10 and 20,000 picofarads;

iv) wherein ESR is the sum of a dielectric loss plus an ohmic loss, and the capacitor comprises a dielectric loss tangent measured in ohms at an MRI RF pulsed frequency or range of frequencies that is less than five percent of the capacitor'"'"'s ESR; and

v) wherein the capacitor'"'"'s ESR at the MRI RF pulsed frequency or range of frequencies is less than 2.0 ohms.

30. The filter feedthrough assembly of claim 29, wherein the MRI RF pulsed frequency or range of frequencies comprises 64 MHz or 128 MHz.

31. The filter feedthrough assembly of claim 29, wherein the capacitance is between 350 and 10,000 picofarads.

32. The filter feedthrough assembly of claim 29, wherein the capacitor'"'"'s ESR at the MRI RF pulsed frequency or range of frequencies is less than 0.5 ohms.

33. The filter feedthrough assembly of claim 29, wherein the capacitor'"'"'s ESR at the MRI RF pulsed frequency or range of frequencies is less than 0.1 ohms.

34. The filter feedthrough assembly of claim 29, wherein the dielectric constant is less than 90.

35. The filter feedthrough assembly of claim 29, including an insulative washer between the capacitor and the insulator.

36. The filter feedthrough assembly of claim 29, wherein the electrically conductive material is a thermal-setting conductive adhesive.

37. The filter feedthrough assembly of claim 36, wherein the thermal-setting conductive adhesive electrically contacts a noble metal, oxide-resistant attachment supported on at least one of the Inboard ferrule end, the inner ferrule perimeter surface, or both.

38. The filter feedthrough assembly of claim 37, wherein the noble metal, oxide-resistant attachment comprises a gold braze.

39. The filter feedthrough assembly of claim 29, wherein the capacitor is selected from the group consisting of a monolithic ceramic capacitor, a flat-through capacitor, a multielement flat-through diverter capacitor, a chip capacitor, an X2Y attenuator, and a feedthrough capacitor.

40. The filter feedthrough assembly of claim 29, wherein the capacitor comprises an element of a multielement broadband lowpass filter having at least one inductor, the multielement broadband lowpass filter forming one of the group consisting of an L filter, a reverse L filter, an LL, a reverse LL, a T, a Pi, and an n-element lowpass filter.

41. The filter feedthrough assembly of claim 29, wherein the ferrule comprises titanium.

42. The filter feedthrough assembly of claim 29, wherein the filter capacitor comprises a broadband lowpass filter.