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Apparatuses and methods for atomic layer deposition

  • US 9,017,776 B2
  • Filed: 09/24/2012
  • Issued: 04/28/2015
  • Est. Priority Date: 07/03/2008
  • Status: Active Grant
First Claim
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1. A method for depositing a material on a substrate, comprising:

  • exposing a substrate sequentially to a titanium precursor gas and a nitrogen plasma to form a titanium nitride material on the substrate during an atomic layer deposition process within a deposition chamber, wherein the titanium precursor gas comprises tetrakis(dimethylamido) titanium, the nitrogen plasma is generated from a remote plasma system, and the atomic layer deposition process comprises;

    flowing the titanium precursor gas into an annular channel within an inlet manifold assembly, wherein the annular channel surrounds a centralized channel, the centralized channel extends through the inlet manifold assembly, and a chamber lid assembly comprising the inlet manifold assembly is coupled with a chamber body forming the deposition chamber;

    flowing the titanium precursor gas from the annular channel into the centralized channel via a plurality of injection holes which extend from the annular channel through a sidewall of the centralized channel, and to the centralized channel;

    flowing the titanium precursor gas through the centralized channel, through a showerhead assembly attached with the chamber lid assembly, and absorbing a layer of the tetrakis(dimethylamido) titanium on the substrate;

    generating the nitrogen plasma by igniting a process gas comprising nitrogen (N2) with the remote plasma system;

    flowing the nitrogen plasma through the centralized channel, through the showerhead assembly, and towards the substrate; and

    exposing the layer of the tetrakis(dimethylamido) titanium to the nitrogen plasma to form the titanium nitride material on the substrate.

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