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Light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures

  • US 9,018,081 B2
  • Filed: 11/23/2013
  • Issued: 04/28/2015
  • Est. Priority Date: 12/27/2011
  • Status: Active Grant
First Claim
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1. A method for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces, the method comprising:

  • growing an n-doped GaN (n-GaN) film overlying a substrate;

    forming a plurality of openings in a first region of the n-GaN film, each opening having planar sidewalls perpendicular to a c-plane aligned with a top surface of the n-GaN film, and formed in a plane selected from a group consisting of an in-plane and a-plane family;

    forming a multiple quantum well (MQW) layer overlying the first region of n-GaN film, including the planar sidewalls of the openings;

    forming a layer of p-doped GaN (p-GaN) overlying the MQW layer;

    depositing a first metal layer overlying a second region of the n-GaN film forming a first electrode; and

    ,depositing a second metal layer overlying the p-GaN film to form a second electrode.

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