Low shrinkage dielectric films
First Claim
1. A method of forming a dielectric layer on a substrate in a substrate processing region of a processing chamber, the method comprising:
- introducing a first precursor into a remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the remote plasma region to produce plasma effluents;
directing the plasma effluents into the substrate processing region;
introducing a silicon-containing precursor into the substrate processing region, wherein the silicon-containing precursor includes at least one silicon-silicon bond; and
reacting the plasma effluents and silicon-containing precursor in the substrate processing region to form a silicon-based dielectric layer that is initially flowable when formed on the substrate, wherein the processing chamber is maintained at a temperature from about 30°
C. to about −
30°
C., and wherein the pressure within the processing chamber is maintained so the reacting operation occurs at or about the condensation point of the silicon-containing precursor.
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Accused Products
Abstract
Methods of forming a dielectric layer on a substrate are described, and may include introducing a first precursor into a remote plasma region fluidly coupled with a substrate processing region of a substrate processing chamber A plasma may be formed in the remote plasma region to produce plasma effluents. The plasma effluents may be directed into the substrate processing region. A silicon-containing precursor may be introduced into the substrate processing region, and the silicon-containing precursor may include at least one silicon-silicon bond. The plasma effluents and silicon-containing precursor may be reacted in the processing region to form a silicon-based dielectric layer that is initially flowable when formed on the substrate.
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Citations
20 Claims
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1. A method of forming a dielectric layer on a substrate in a substrate processing region of a processing chamber, the method comprising:
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introducing a first precursor into a remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the remote plasma region to produce plasma effluents; directing the plasma effluents into the substrate processing region; introducing a silicon-containing precursor into the substrate processing region, wherein the silicon-containing precursor includes at least one silicon-silicon bond; and reacting the plasma effluents and silicon-containing precursor in the substrate processing region to form a silicon-based dielectric layer that is initially flowable when formed on the substrate, wherein the processing chamber is maintained at a temperature from about 30°
C. to about −
30°
C., and wherein the pressure within the processing chamber is maintained so the reacting operation occurs at or about the condensation point of the silicon-containing precursor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of forming a dielectric layer on a substrate in a substrate processing region of a processing chamber, the method comprising:
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introducing a first precursor into a remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the remote plasma region to produce plasma effluents; directing the plasma effluents into the substrate processing region; introducing a silicon-containing precursor into the substrate processing region, wherein the silicon-containing precursor includes at least one silicon-silicon bond; reacting the plasma effluents and silicon-containing precursor in the substrate processing region to form a silicon-based dielectric layer that is initially flowable when formed on the substrate, wherein the processing chamber is maintained at a temperature from about 30°
C. to about −
30°
C., and wherein the pressure within the processing chamber is maintained so the reacting operation occurs at or about the condensation point of the silicon-containing precursor; andcuring the formed silicon-based dielectric layer with at least one additional precursor. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification