Solar cell with epitaxially grown quantum dot material

• US 9,018,515 B2
• Filed: 06/30/2011
• Issued: 04/28/2015
• Est. Priority Date: 01/20/2004
• Status: Active Grant

• Current Assignee: Saint Augustin Canada Electric Inc.
• Original Assignee: Cyrium Technologies Incorporated
• Inventors: Fafard, Simon, Riel, Bruno J.
• Primary Examiner(s): Pillay, Devina
• Application Number:
  US13/173,638
• Publication Number:
  US 20110277829A1
• Time in Patent Office: 1,398 Days
• Field of Search: 136/255
• US Class Current: 136/255
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01L 31/0352 characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• CPC Class Codes: H01L 31/035209 comprising a quantum structures
• CPC Class Codes: H01L 31/035218 the quantum structure being quantum dots
• CPC Class Codes: H01L 31/035236 Superlattices; Multiple quantum well structures
• CPC Class Codes: H01L 31/0687 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/0725 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/0735 comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
• CPC Class Codes: H01L 31/075 the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A solar cell with spaced apart groupings of self-assembled quantum dot layers interposed with barrier layers. Such groupings allow improved control over the growth front quality of the solar cell, the crystalline structure of the solar cell, and on the performance metrics of the solar cell.

Claims

1. A photovoltaic solar cell comprising:

a Ge base with a Ge lattice constant; and

a plurality of semiconductor layers formed on the Ge base, the plurality of semiconductor layers including;

first layers of a first semiconductor material, the first semiconductor material comprising InAs, the first layers each having a thickness of about 0.40 nm, the first semiconductor material having a first lattice constant;

second layers of a second semiconductor material, the second semiconductor material comprising GaAs, the second layers each having a thickness of about 32.8 nm, the second semiconductor material having a second lattice constant, the second layers being interposed between the first layers; and

at least one semiconductor spacer layer comprising InGaAs with an indium concentration of about 1.15%, each of the at least one semiconductor spacer layer having a respective spacer layer lattice constant equal to the Ge lattice constant, the first layers and the second layers being arranged in at least two groupings, each grouping comprising alternating first and second layers that define multiple adjoining pairs of layers, the at least two groupings being separated from each other by one of the at least one semiconductor spacer layer.

2. The photovoltaic solar cell of claim 1 wherein the plurality of semiconductor layers include an intermediary semiconductor layer formed on the Ge base, one of the at least two groupings being formed on the intermediary semiconductor layer.

3. The photovoltaic solar cell of claim 1 wherein the Ge base is one of a Ge semiconductor substrate and an epitaxially-grown Ge semiconductor.

4. The photovoltaic solar cell of claim 1 wherein:

the first layers are compressively strained layers with a first layers bandgap energy, and

the second layers are barrier layers with a barrier layer bandgap energy, the barrier layer bandgap energy being larger than the first layers bandgap energy, and the first lattice constant being larger than the second lattice constant by a factor ranging between 2% and 10%.

5. The photovoltaic solar cell of claim 1 wherein each of the at least one spacer layer has a same thickness.

6. The photovoltaic solar cell of claim 1 wherein:

the Ge lattice constant is a base material lattice constant parallel to a growth plane of the photovoltaic solar cell;

the first lattice constant is a first semiconductor material lattice constant parallel to the growth plane of the photovoltaic solar cell;

the second lattice constant is a second semiconductor material lattice constant parallel to the growth plane of the photovoltaic solar cell;

each respective spacer layer lattice constant is a spacer layer lattice constant parallel to the growth plane of the photovoltaic solar cell.

7. The photovoltaic solar cell of claim 1 wherein the photovoltaic solar cell includes a plurality of p-n junctions.

8. The photovoltaic solar cell of claim 4 wherein the compressively strained layers comprise self-assembled quantum dots.

9. The photovoltaic solar cell of claim 8 wherein the self-assembled quantum dots are coherently strained.

10. The photovoltaic solar cell of claim 4 wherein the compressively strained layers are obtained by epitaxy using a Stranski-Krastanow growth mode.

11. The photovoltaic solar cell of claim 1 wherein the solar cell is a pseudomorphic solar cell.

12. The photovoltaic solar cell of claim 1 wherein the at least one semiconductor spacer layer has a thickness ranging between 50 nm and 500 nm.

13. The photovoltaic solar cell of claim 12 wherein the at least one semiconductor spacer layer has a thickness ranging between 100 nm and 300 nm.

14. A photovoltaic solar cell comprising:

a Ge base with a Ge lattice constant equal to a_Ge; and

a plurality of semiconductor layers formed on the Ge base, the plurality of semiconductor layers including;

first layers of a first semiconductor material, the first semiconductor material comprising InGaAs, the first layers each having a thickness t_InGaAs less than about 1 nm, the first semiconductor material having a first lattice constant equal to a_InGaAs;

second layers of a second semiconductor material, the second semiconductor material comprising GaAs, the second semiconductor material having a second lattice constant a_GaAs, the second layers being interposed between the first layers; and

at least one semiconductor spacer layer comprising InGaAs with an indium concentration of about 1.15%, each of the at least one semiconductor spacer layer having a respective spacer layer lattice constant equal to the Ge lattice constant, the first layers and the second layers being arranged in at least two groupings, each grouping comprising alternating first and second layers that define multiple adjoining pairs of layers, the at least two groupings being separated from each other by one of the at least one semiconductor spacer layer, the second layers each having a thickness t_GaAs selected to satisfy the equation

15. The photovoltaic solar cell of claim 14 wherein a concentration of indium in the first layers is comprised between 35% and 100%.