Light emitting device
First Claim
1. A light emitting device comprising:
- an LED chip and a mounting substrate,said LED chip comprising an n-type nitride semiconductor layer, a nitride light emission layer, a p-type nitride semiconductor layer, an anode electrode, and a cathode electrode,said n-type nitride semiconductor layer having a first surface,said nitride light emission layer being disposed on said first surface of said n-type nitride semiconductor layer,said p-type nitride semiconductor layer being disposed on said nitride light emission layer,said anode electrode being opposite of said nitride light emission layer from said p-type nitride semiconductor layer and covering said p-type nitride semiconductor layer,said cathode electrode being disposed on said first surface of said n-type nitride semiconductor layer,said mounting substrate being configured to mount said LED chip,said mounting substrate having a first patterned conductor which is coupled to said cathode electrode through a cathode bump and a second patterned conductor which is electrically and physically connected to anode bumps, said anode bumps being electrically and physically connected to said anode electrode,said LED chip comprising dielectric layers which have an arrangement which resembles an island and a light reflective conductive film covering said dielectric layers,said dielectric layers having a refractive index which is smaller than a refractive index of said p-type nitride semiconductor layer,said dielectric layers being located between said p-type nitride semiconductor layer and said anode electrode,said p-type nitride semiconductor layer having first regions which are overlapped with said anode bumps in a planer view, respectively,said dielectric layers being not overlapped with said first regions,said light reflective conductive film being located between said anode electrode and said dielectric layers, andsaid anode electrode does not penetrate said light reflective conductive film.
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Accused Products
Abstract
The light emitting device comprises a mounting substrate and an LED chip which comprises an n-type nitride semiconductor layer, a nitride light emission layer on the n-type nitride semiconductor layer, p-type nitride semiconductor layer on the nitride light emission layer, an anode electrode opposite of the nitride light emission layer from the p-type nitride semiconductor layer, and a cathode electrode on the n-type nitride semiconductor layer. The mounting substrate has a patterned conductor which is connected to the cathode electrode through a bump and also connected to the anode electrode through a bump. The LED chip further comprises one or more dielectric layer between the p-type nitride semiconductor layer and the anode electrode to have an arrangement which resembles an island. The p-type nitride semiconductor layer has a first region which is overlapped with the bump. The dielectric layer is not formed within the first region.
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Citations
12 Claims
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1. A light emitting device comprising:
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an LED chip and a mounting substrate, said LED chip comprising an n-type nitride semiconductor layer, a nitride light emission layer, a p-type nitride semiconductor layer, an anode electrode, and a cathode electrode, said n-type nitride semiconductor layer having a first surface, said nitride light emission layer being disposed on said first surface of said n-type nitride semiconductor layer, said p-type nitride semiconductor layer being disposed on said nitride light emission layer, said anode electrode being opposite of said nitride light emission layer from said p-type nitride semiconductor layer and covering said p-type nitride semiconductor layer, said cathode electrode being disposed on said first surface of said n-type nitride semiconductor layer, said mounting substrate being configured to mount said LED chip, said mounting substrate having a first patterned conductor which is coupled to said cathode electrode through a cathode bump and a second patterned conductor which is electrically and physically connected to anode bumps, said anode bumps being electrically and physically connected to said anode electrode, said LED chip comprising dielectric layers which have an arrangement which resembles an island and a light reflective conductive film covering said dielectric layers, said dielectric layers having a refractive index which is smaller than a refractive index of said p-type nitride semiconductor layer, said dielectric layers being located between said p-type nitride semiconductor layer and said anode electrode, said p-type nitride semiconductor layer having first regions which are overlapped with said anode bumps in a planer view, respectively, said dielectric layers being not overlapped with said first regions, said light reflective conductive film being located between said anode electrode and said dielectric layers, and said anode electrode does not penetrate said light reflective conductive film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A light emitting device comprising:
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an LED chip and a mounting substrate, said LED chip comprising an n-type nitride semiconductor layer, a nitride light emission layer, a p-type nitride semiconductor layer, an anode electrode, and a cathode electrode, said n-type nitride semiconductor layer having a first surface, said nitride light emission layer being disposed on said first surface of said n-type nitride semiconductor layer, said p-type nitride semiconductor layer being disposed on said nitride light emission layer, said anode electrode being opposite of said nitride light emission layer from said p-type nitride semiconductor layer and covering said p-type nitride semiconductor layer, said cathode electrode being disposed on said first surface of said n-type nitride semiconductor layer, said mounting substrate being configured to mount said LED chip, said mounting substrate having a first patterned conductor which is coupled to said cathode electrode through a cathode bump and a second patterned conductor which is electrically and physically connected to anode bumps, said anode bumps being electrically and physically connected to said anode electrode, said LED chip comprising a dielectric layer having openings and a light reflective conductive film covering said dielectric layer, said dielectric layer having a refractive index which is smaller than a refractive index of said p-type nitride semiconductor layer, said dielectric layer being located between said p-type nitride semiconductor layer and said anode electrode, in a planer view, said anode bumps overlapping with said openings, respectively, and not overlapping with said dielectric layer, said anode electrode not directly contacting said p-type nitride semiconductor layer, said light reflective conductive film being located between said dielectric layer and said anode electrode, and said anode electrode does not penetrate said light reflective conductive film. - View Dependent Claims (11, 12)
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Specification