Semiconductor light emitting device
First Claim
1. A semiconductor light emitting device having a conductive substrate, a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer disposed in that order, the semiconductor light emitting device comprising:
- a first electrode layer disposed between the conductive substrate and the first conductivity type semiconductor layer and electrically connected to the conductive substrate;
at least one via penetrating through the first electrode layer, the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer;
a second electrode layer having;
a first portion extending in parallel with the first electrode layer and having a top surface facing the first electrode layer and a bottom surface facing the conductive substrate, anda second portion extending, through inside of the at least one via, from an area between the conductive substrate and the first conductivity type semiconductor layer to an area of the second conductivity type semiconductor layer, the second portion filling all the inside of the at least one via, the first portion and the second portion being connected with each other; and
an insulating part disposed between the second electrode layer and each of the first electrode layer, the first conductivity type semiconductor layer, the active layer, and the conductive substrate, the insulating part electrically insulating the second electrode layer from the conductive substrate.
2 Assignments
0 Petitions
Accused Products
Abstract
There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
24 Citations
15 Claims
-
1. A semiconductor light emitting device having a conductive substrate, a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer disposed in that order, the semiconductor light emitting device comprising:
-
a first electrode layer disposed between the conductive substrate and the first conductivity type semiconductor layer and electrically connected to the conductive substrate; at least one via penetrating through the first electrode layer, the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer; a second electrode layer having; a first portion extending in parallel with the first electrode layer and having a top surface facing the first electrode layer and a bottom surface facing the conductive substrate, and a second portion extending, through inside of the at least one via, from an area between the conductive substrate and the first conductivity type semiconductor layer to an area of the second conductivity type semiconductor layer, the second portion filling all the inside of the at least one via, the first portion and the second portion being connected with each other; and an insulating part disposed between the second electrode layer and each of the first electrode layer, the first conductivity type semiconductor layer, the active layer, and the conductive substrate, the insulating part electrically insulating the second electrode layer from the conductive substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
Specification