Semiconductor light emitting device

• US 9,018,666 B2
• Filed: 03/22/2010
• Issued: 04/28/2015
• Est. Priority Date: 02/13/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Pun Jae, Park, Ki Yeol, Lee, Sang Bum, Myoung, Seon Young, Cho, Myong Soo
• Primary Examiner(s): HSIEH, HSIN YI
• Application Number:
  US12/728,853
• Publication Number:
  US 20100171140A1
• Time in Patent Office: 1,863 Days
• Field of Search: 257/99, 257/E33.065, 257/E33.062
• US Class Current: 257/99
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

Claims

1. A semiconductor light emitting device having a conductive substrate, a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer disposed in that order, the semiconductor light emitting device comprising:

a first electrode layer disposed between the conductive substrate and the first conductivity type semiconductor layer and electrically connected to the conductive substrate;

at least one via penetrating through the first electrode layer, the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer;

a second electrode layer having;

a first portion extending in parallel with the first electrode layer and having a top surface facing the first electrode layer and a bottom surface facing the conductive substrate, and

a second portion extending, through inside of the at least one via, from an area between the conductive substrate and the first conductivity type semiconductor layer to an area of the second conductivity type semiconductor layer, the second portion filling all the inside of the at least one via, the first portion and the second portion being connected with each other; and

an insulating part disposed between the second electrode layer and each of the first electrode layer, the first conductivity type semiconductor layer, the active layer, and the conductive substrate, the insulating part electrically insulating the second electrode layer from the conductive substrate.

2. The semiconductor light emitting device of claim 1, wherein an upper portion of the at least one via is covered with the second conductivity type semiconductor layer.

3. The semiconductor light emitting device of claim 1, wherein the first electrode layer reflects light generated from the active layer.

4. The semiconductor light emitting device of claim 3, wherein the first electrode layer includes one selected from a group consisting of Ag, Al, and Pt.

5. The semiconductor light emitting device of claim 1, wherein each of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer is formed of a GaN-based compound semiconductor.

6. The semiconductor light emitting device of claim 1, wherein the active layer is formed of a In_xAl_yGa_(1-x-y)N (here, 0≦

x≦

1, 0≦

y≦

1, and 0≦

x+y≦

1) based compound semiconductor.

7. The semiconductor light emitting device of claim 1, wherein an irregular pattern is disposed on the second conductivity type semiconductor layer.

8. The semiconductor light emitting device of claim 1, wherein the second conductivity type semiconductor layer has a photonic crystal structure.

9. The semiconductor light emitting device of claim 1, wherein the conductive substrate is a metallic substrate.

10. The semiconductor light emitting device of claim 9, wherein the metallic substrate includes one selected from a group consisting of Au, Ni, Cu, and W.

11. The semiconductor light emitting device of claim 1, wherein the conductive substrate is a semiconductor substrate.

12. The semiconductor light emitting device of claim 11, wherein the semiconductor substrate includes one selected from a group consisting of Si, Ge, and GaAs.

13. The semiconductor light emitting device of claim 1, wherein the first electrode layer surrounds the top surface and side surfaces of the first portion of the second electrode layer.

14. The semiconductor light emitting device of claim 1, wherein the insulating part contacts the top surface and the bottom surface of the first portion of the second electrode layer.

15. The semiconductor light emitting device of claim 1,

wherein the at least one via comprises a plurality of vias penetrating through the first electrode layer, the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer, and

wherein the second electrode layer further comprises a third portion extending, through an inside of one of the plurality of vias, from the first portion of the second electrode layer to a top surface of the second conductivity type semiconductor layer.