×

Trench-based device with improved trench protection

  • US 9,018,698 B2
  • Filed: 11/16/2012
  • Issued: 04/28/2015
  • Est. Priority Date: 11/16/2012
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device, comprising:

  • a semiconductor substrate having a first type of conductivity;

    a first layer formed on the substrate having the first type of conductivity and being more lightly doped than the substrate;

    at least one trench formed in the first layer;

    a dielectric layer lining a bottom surface and sidewalls of the at least one trench;

    a conducting material filling the at least one trench;

    a lightly doped region formed in the first layer having a second conductivity type, said lightly doped region being disposed below the bottom surface of the trench;

    a metal layer disposed over and contacting the first layer and the conducting material;

    a second layer formed on the substrate and having the second conductivity type, the second layer being located adjacent to at least one side of the trench and being lightly doped so that a Schottky contact is formed between the metal layer disposed over the first layer and the conducting material and the second layer;

    anda first electrode formed over the metal layer and a second electrode formed on a backside of the substrate.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×