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State determination in resistance variable memory

  • US 9,019,754 B1
  • Filed: 12/17/2013
  • Issued: 04/28/2015
  • Est. Priority Date: 12/17/2013
  • Status: Active Grant
First Claim
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1. A method for sensing a resistance variable memory cell, comprising:

  • applying an evaluation signal to a resistance variable memory cell in an array of resistance variable memory cells, the evaluation signal configured to cause the memory cell to switch from a first data state to a second data state at a threshold current;

    sensing three or more responses from the memory cell responsive to the evaluation signal at three or more sample points;

    determining a first delta between a first pair of the three or more responses;

    determining a second delta between a second pair of the three or more responses;

    determining an absolute difference between the first delta and the second delta; and

    determining that the memory cell changes from the first data state to the second data state during application of the evaluation signal responsive to the absolute difference being above a predetermined threshold.

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