Micromechanical semiconductor sensing device

• US 9,021,887 B2
• Filed: 12/19/2011
• Issued: 05/05/2015
• Est. Priority Date: 12/19/2011
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Kalz, Franz-Peter, Theuss, Horst, Winkler, Bernhard, Hosseini, Khalil, Mahler, Joachim, Mengel, Manfred
• Primary Examiner(s): Noori, Max
• Application Number:
  US13/329,618
• Publication Number:
  US 20130152696A1
• Time in Patent Office: 1,233 Days
• Field of Search: 737/60, 737/77, 737/80
• US Class Current: 73/777
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 3/0021 Transducers for transforming electrical into mechanical energy or vice versa dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00
• CPC Class Codes: B81B 3/0072 For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: B81C 2203/0154 Moulding a cap over the MEMS device
• CPC Class Codes: G01L 1/18 using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
• CPC Class Codes: G01L 19/0092 Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature G01L9/025, G01L9/045, G01L9/065, G01L9/085, G01L9/105, G01L9/125, G01L19/02, G01L19/04 take precedence; measuring two or more variable G01D21/02; temperature sensors with pressure compensation G01K1/26
• CPC Class Codes: G01L 19/02 Arrangements for preventing, or for compensating for, effects of inclination or acceleration of the measuring device; Zero-setting means for aneroid barometers G01L7/14
• CPC Class Codes: G01L 9/0072 using variations in capacitance
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1815 Shape
• CPC Class Codes: H01L 2924/3511 Warping

Abstract

Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

Claims

1. A micromechanical semiconductor pressure sensing device comprising:

a movable diaphragm above a hollow space, wherein the diaphragm is part of a capacity configured to yield an electrical sensing signal in response to a pressure acting on the diaphragm,

wherein a piezoresistive sensing device is buried in the diaphragm, the piezoresistive sensing device being configured to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal.

2. The device according to claim 1, further comprising a compensation logic configured to compensate, based on the electrical disturbance signal, a disturbance in the electrical sensing signal caused by the mechanical stress.

3. A method for manufacturing a micromechanical semiconductor pressure sensing device, the method comprising:

structuring a movable diaphragm above a hollow space, wherein the diaphragm is part of a capacity configured to yield an electrical sensing signal in response to a pressure acting on the diaphragm,

wherein a piezoresistive sensing device is buried in diaphragm, the piezoresistive sensing device being configured to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.