Silicon nitride powder for siliconnitride phosphor, CaAlSiN;phosphor using same, Sr;Si;N;phosphor using same, (Sr, Ca)AlSiN;phosphor using same, La;Si;N;Phosphor using same, and methods for producing the phosphors
First Claim
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1. A crystalline silicon nitride powder for siliconitride phosphors, which consists of an α
- -type crystalline silicon nitride powder and is used as a raw material for producing a siliconitride phosphor comprising a silicon element and a nitrogen element but no oxygen element as a constituent element, an oxygen content of said silicon nitride powder being 0.2% by weight to 0.8% by weight, wherein the silicon nitride powder has an average particle diameter of 3 μ
m to 12 μ
m, a specific surface area of 0.2 to 1.0 m2/g.
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Abstract
Provided are a crystalline silicon nitride powder for a siliconitride phosphors, which is used as a starting material for producing a siliconitride phosphor containing a silicon element and a nitrogen element but no oxygen element as a constitutent element, an oxygen content of the silicon nitride phosphor being 0.2-0.8 wt %; a CaAlSiN3 phosphor, an Sr2Si5N8 phosphor, an (Sr, Ca)AlSiN3 phosphor and an La3Si6N11 phosphor, each using the silicon nitride powder; and a method for producing the phosphors.
16 Citations
6 Claims
-
1. A crystalline silicon nitride powder for siliconitride phosphors, which consists of an α
- -type crystalline silicon nitride powder and is used as a raw material for producing a siliconitride phosphor comprising a silicon element and a nitrogen element but no oxygen element as a constituent element, an oxygen content of said silicon nitride powder being 0.2% by weight to 0.8% by weight, wherein the silicon nitride powder has an average particle diameter of 3 μ
m to 12 μ
m, a specific surface area of 0.2 to 1.0 m2/g. - View Dependent Claims (6)
- -type crystalline silicon nitride powder and is used as a raw material for producing a siliconitride phosphor comprising a silicon element and a nitrogen element but no oxygen element as a constituent element, an oxygen content of said silicon nitride powder being 0.2% by weight to 0.8% by weight, wherein the silicon nitride powder has an average particle diameter of 3 μ
-
2. A method for producing a CaAlSiN3 phosphor by using as a raw material a crystalline silicon nitride powder for the siliconitride phosphors comprising a silicon element and a nitrogen element but no oxygen element as a constituent element, an oxygen content of said silicon nitride powder being 0.2 by weight to 0.8% by weight, wherein the silicon nitride powder has an average particle diameter of 1.0 to 12 μ
- m, and a specific surface area of 0.2 or more and less than 3.0 m2/g, the method comprising;
mixing the silicon nitride powder for the siliconitride phosphors, a material as an aluminum source, a material as a calcium source, and a material as an europium source to have the general formula of (EuxCa1-x)AlSiN3 (with the proviso that, 0<
x<
0.1); andcalcining the mixture at 1400 to 2000°
C. under a nitrogen atmosphere of 0.05 MPa to 100 MPa.
- m, and a specific surface area of 0.2 or more and less than 3.0 m2/g, the method comprising;
-
3. A method for producing a Sr2Si5N5 phosphor by using as a raw material a crystalline silicon nitride powder for the siliconitride phosphors comprising a silicon element and a nitrogen element but no oxygen element as a constituent element, an oxygen content of said silicon nitride powder being 0.2 by weight to 0.8% by weight, wherein the silicon nitride powder has an average particle diameter of 1.0 to 12 μ
- m, and a specific surface area of 0.2 or more and less than 3.0 m2/g, the method comprising;
mixing the silicon nitride powder for the siliconitride phosphors, a material as a strontium source, and a material as an europium source to have the general formula of (EuxSr1-x)2Si5N8 (with the proviso that, 0.01<
x<
0.2); andcalcining the mixture at 1400 to 2000°
C. under a nitrogen atmosphere of 0.05 MPa to 100 MPa.
- m, and a specific surface area of 0.2 or more and less than 3.0 m2/g, the method comprising;
-
4. A method for producing a (Sr, Ca)AlSiN3 phosphor by using as a raw material a crystalline silicon nitride powder for the siliconitride phosphors comprising a silicon element and a nitrogen element but no oxygen element as a constituent element, an oxygen content of said silicon nitride powder being 0.2 by weight to 0.8% by weight, wherein the silicon nitride powder has an average particle diameter of 1.0 to 12 μ
- m, and a specific surface area of 0.2 or more and less than 3.0 m2/g, the method comprising;
mixing the silicon nitride powder for the siliconitride phosphors, a material as a strontium source, a material as a calcium source, a material as an europium source, and a material as an aluminum source to have the general formula of (EuxSryCaz)AlSiN3 (with the proviso that, x+y+z=1, 0.002≦
x≦
0.03, and 0.1≦
y≦
0.8); andcalcining the mixture at 1400 to 2000°
C. under a nitrogen atmosphere of 0.05 MPa to 100 MPa.
- m, and a specific surface area of 0.2 or more and less than 3.0 m2/g, the method comprising;
-
5. A method for producing a La3Si6N11 phosphor by using as a raw material a crystalline silicon nitride powder for the siliconitride phosphors comprising a silicon element and a nitrogen element but no oxygen element as a constituent element, an oxygen content of said silicon nitride powder being 0.2 by weight to 0.8% by weight, wherein the silicon nitride powder has an average particle diameter of 1.0 to 12 μ
- m, and a specific surface area of 0.2 or more and less than 3.0 m2/g, the method comprising;
mixing the silicon nitride powder for the siliconitride phosphors, a material as a lanthanum source, and a material as a cerium source to have the general formula of (CexLa1-x)3Si6N11 (with the proviso that, 0.001<
x<
1.0); andcalcining the mixture at 1400 to 2000°
C. under a nitrogen atmosphere of 0.05 MPa to 100 MPa.
- m, and a specific surface area of 0.2 or more and less than 3.0 m2/g, the method comprising;
Specification