Method for fabricating a semiconductor device
First Claim
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1. A method for fabricating a semiconductor device, the method comprising:
- forming a pre-isolation layer covering a fin formed on a substrate, the pre-isolation layer including a lower pre-isolation layer making contact with the fin and an upper pre-isolation layer not making contact with the fin;
removing a portion of the upper pre-isolation layer by performing a first polishing process; and
planarizing the pre-isolation layer such that an upper surface of the fin and an upper surface of the pre-isolation layer are coplanar by performing a second polishing process for removing a remaining portion of the upper pre-isolation layer,wherein a first speed at which the fin is polished by a slurry used in the second polishing process is smaller to a second speed at which the pre-isolation layer is polished by the slurry used in the second polishing process.
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Abstract
A method for fabricating a semiconductor device includes forming a pre-isolation layer covering a fin formed on a substrate, the pre-isolation layer including a lower pre-isolation layer making contact with the fin and an upper pre-isolation layer not making contact with the fin, removing a portion of the upper pre-isolation layer by performing a first polishing process, and planarizing the pre-isolation layer such that an upper surface of the fin and an upper surface of the pre-isolation layer are coplanar by performing a second polishing process for removing the remaining portion of the upper pre-isolation layer.
24 Citations
18 Claims
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1. A method for fabricating a semiconductor device, the method comprising:
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forming a pre-isolation layer covering a fin formed on a substrate, the pre-isolation layer including a lower pre-isolation layer making contact with the fin and an upper pre-isolation layer not making contact with the fin; removing a portion of the upper pre-isolation layer by performing a first polishing process; and planarizing the pre-isolation layer such that an upper surface of the fin and an upper surface of the pre-isolation layer are coplanar by performing a second polishing process for removing a remaining portion of the upper pre-isolation layer, wherein a first speed at which the fin is polished by a slurry used in the second polishing process is smaller to a second speed at which the pre-isolation layer is polished by the slurry used in the second polishing process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for fabricating a semiconductor device, the method comprising:
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forming a mask pattern on a substrate; forming a fin protruding on the substrate by etching the substrate using the mask pattern; forming a pre-isolation layer covering the fin and the mask pattern; exposing the mask pattern by removing a portion of the pre-isolation layer by performing a first polishing process; and planarizing the pre-isolation layer such that an upper surface of the fin and an upper surface of the pre-isolation layer are coplanar by performing a second polishing process after exposing the mask pattern and then exposing the upper surface of the fin, wherein a slurry used in the second polishing process includes a poly stopping slurry. - View Dependent Claims (12, 13)
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14. A method for fabricating a semiconductor device, the method comprising:
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forming a first mask pattern on a substrate; forming a mask layer substantially conformally along an upper surface of the substrate having the first mask pattern; patterning the mask layer to form a second mask pattern exposing the first mask pattern; removing the first mask pattern to expose the substrate on both sides of the mask pattern; forming a plurality of fins on a first region of the substrate but not on a second region of the substrate by etching the substrate using the second mask pattern; forming a pre-isolation layer covering the fins and the second mask pattern remaining on upper surfaces of the fins; exposing the second mask pattern by removing a portion an upper layer of the pre-isolation layer covering the fins by performing a first polishing process; performing a densification process to oxidize the upper layer of the pre-isolation layer after exposing the second mask pattern; removing a portion of the upper layer of the pre-isolation layer surrounding lateral surfaces of the second mask pattern; removing the second mask pattern after removing the portion of the upper layer of the pre-isolation layer, thereby exposing the upper surfaces of the fins; doping impurities into the fins after removing the second mask pattern; removing the remaining portion of the upper layer of the pre-isolation layer by performing a second polishing process, thereby planarizing the pre-isolation layer such that the upper surface of the fins are coplanar with an upper surface of the pre-isolation layer; and removing a portion of a lower layer of the pre-isolation layer to thereby form an isolation layer which contacts a lower portion of the fins and wherein the fins protrude from isolation layer. - View Dependent Claims (15, 16, 17, 18)
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Specification