Methods for forming a conductive material and methods for forming a conductive structure

• US 9,023,711 B2
• Filed: 05/14/2014
• Issued: 05/05/2015
• Est. Priority Date: 11/19/2008
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Marsh, Eugene P.
• Primary Examiner(s): PHAM, THANHHA S
• Application Number:
  US14/277,507
• Publication Number:
  US 20140248771A1
• Time in Patent Office: 356 Days
• Field of Search: 438/239, 438/243, 438/253, 438/256, 438/396, 438/399, 438/625, 438674-675, 438/685
• US Class Current: 438/399
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/7687 Thin films associated with contacts of capacitors
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 28/65 comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H10B 12/033 the capacitor extending over the transistor

Abstract

A method of forming a conductive material comprises forming at least one opening extending through an organic material and an insulative material underlying the organic material to expose at least a portion of a substrate and a conductive contact in the substrate. The method further comprises lining exposed surfaces of the insulative material, the conductive contact, and the at least a portion of the substrate in the at least one opening with a conductive material without forming the conductive material on the organic material.

Claims

1. A method of forming a conductive material, the method comprising:

forming at least one opening extending through an organic material and an insulative material underlying the organic material to expose at least a portion of a substrate and a conductive contact in the substrate;

lining exposed surfaces of the insulative material, the conductive contact, and the at least a portion of the substrate in the at least one opening with a conductive material without forming the conductive material on the organic material; and

forming a dielectric material over the conductive material, and forming another conductive material over the dielectric material to form at least one capacitor structure.

2. The method of claim 1, further comprising removing the organic material.

3. The method of claim 2, further comprising utilizing the at least one capacitor structure as a mask to remove an adjacent portion of the insulative material without removing the another conductive material.

4. The method of claim 3, wherein removing an adjacent portion of the insulative material comprises exposing transistor devices in the substrate.

5. A method of forming a conductive material, comprising:

removing a portion of each of an organic material and an underlying material to form at least one opening extending through the organic material and the underlying material and exposing surfaces of a substrate and a conductive contact;

conformally forming a conductive material on exposed surfaces of the underlying material, the substrate, and the conductive contact without forming the conductive material on the organic material; and

forming a dielectric material over the conductive material, and forming another conductive material over the dielectric material to form at least one capacitor structure.

6. The method of claim 5, wherein conformally forming a conductive material on the exposed surfaces of the underlying material, the substrate, and the conductive contact without forming the conductive material on the organic material comprises forming the conductive material over the exposed surfaces of the underlying material, the substrate, and the conductive contact without substantially filling the at least one opening.

7. The method of claim 5, wherein removing a portion of each of an organic material and an underlying material comprises removing a portion of an organic material selected from the group consisting of polystyrene (PS), polyethylene (PE), polypropylene (PP), polychloroprene (CR), a polyvinyl ether, poly(vinyl acetate) (PVAc), poly(vinyl chloride) (PVC), a polysiloxane, a poly(methyl methacrylate) (PMMA), a polyurethane (PU), a polyacrylate, a polyacrylamide, novolak, polymethylglutarimide (PMGI), polymethylsilane (PMS), non-aromatic polymers, polycycloolefin, and copolymers and mixtures thereof.

8. The method of claim 5, wherein removing a portion of each of an organic material and an underlying material comprises removing a portion of an organic material selected from the group consisting of a diazonaphthoquinone-based material, a polyhydroxystyrene-based material, a phenol formaldehyde-based material, and an epoxy-based material.

9. The method of claim 5, further comprising cleaning surfaces exposed by the at least one opening, prior to conformally forming the conductive material on exposed surfaces of the underlying material, the substrate, and the conductive contact without forming the conductive material on the organic material.

10. The method of claim 9, wherein cleaning surfaces exposed by the at least one opening comprises subjecting the surfaces exposed by the at least one opening to at least one of a solution comprising hydrogen fluoride and a plasma comprising ozone.

11. The method of claim 5, wherein conformally forming a conductive material on exposed surfaces of the underlying material, the substrate, and the conductive contact without forming the conductive material on the organic material comprises conformally forming the conductive material by atomic layer deposition.

12. The method of claim 11, wherein conformally forming the conductive material by atomic layer deposition comprises selectively reacting a precursor gas with the exposed surfaces of the underlying material, the substrate, and the conductive contact without reacting the precursor gas with the organic material.

13. The method of claim 5, wherein conformally forming a conductive material on exposed surfaces of the underlying material, the substrate, and the conductive contact comprises forming platinum, titanium, tantalum, iridium, rhodium, ruthenium, copper, an oxide or nitride thereof, combinations thereof, or an alloy thereof on the exposed surfaces of the underlying material, the substrate, and the conductive contact.

14. A method of forming a conductive structure, the method comprising:

removing portions of each of an organic material and an insulative material underlying the organic material to form at least one opening in the insulative material, the at least one opening exposing a surface of a conductive contact;

subjecting the insulative material and the surface of the conductive contact to a precursor gas configured to react with the insulative material and the surface of the conductive contact to form a first conductive material on sidewalls of the insulative material within the at least one opening and on the surface of the conductive contact exposed between the sidewalls of the insulative material, without forming the first conductive material on the organic material;

forming a dielectric material over and in contact with the first conductive material; and

forming a second conductive material over and in contact with the dielectric material to form at least one capacitor structure.

15. The method of claim 14, further comprising applying an etchant configured to remove organic residues on the surface of the conductive contact before subjecting the insulative material and the surface of the conductive contact to the precursor gas.

16. The method of claim 14, wherein forming the first conductive material on the sidewalls of the insulative material within the at least one opening and on the surface of the conductive contact exposed between the sidewalls of the insulative material without founing the first conductive material on the organic material comprises:

forming a conductive material comprising at least one of platinum, iridium, rhodium, ruthenium, and copper on the sidewalls of the insulative material within the at least one opening and on the surface of the conductive contact exposed between the sidewalls of the insulative material.

17. The method of claim 16, wherein forming a conductive material comprising at least one of platinum, iridium, rhodium, ruthenium, and copper on the sidewalls of the insulative material within the at least one opening and on the surface of the conductive contact exposed between the sidewalls of the insulative material comprises forming the conductive material by atomic layer deposition.

18. The method of claim 14, wherein subjecting the insulative material and the surface of the conductive contact to a precursor gas configured to react with the insulative material and the surface of the conductive contact comprises reacting a platinum precursor gas with the insulative material and the surface of the conductive contact to form platinum thereon without reacting the platinum precursor gas with the organic material.

19. The method of claim 18, wherein reacting a platinum precursor gas with the insulative material and the surface of the conductive contact comprises reacting the platinum precursor gas selected from the group consisting of (trimethyl)methylcyclopentadienyl platinum, (trimethyl)cyclopentadienyl (C₅H₅)Pt(CH₃)₃, Pt(acetylacetonate)₂, Pt(PF₃)₄, Pt(CO)₂Cl₂, cis-[Pt(CH₃)₂((CH₃)NC)₂], and platinum hexafluoroacetylacetonate with the insulative material and the surface of the conductive contact.