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Horizontally oriented and vertically stacked memory cells

  • US 9,024,283 B2
  • Filed: 02/05/2013
  • Issued: 05/05/2015
  • Est. Priority Date: 06/22/2010
  • Status: Active Grant
First Claim
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1. A memory device, comprising:

  • at least two vertically stacked memory cells, wherein each of the memory cells include;

    a memory cell material having a recess formed therein;

    a first electrode in direct contact with a single first side of the memory cell material; and

    a second electrode in the recess and in direct contact with a single second side of the memory cell material.

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