Wafer level phosphor coating method and devices fabricated utilizing method
First Claim
1. A light emitting diode (LED) chip wafer, comprising:
- a plurality of vertical geometry LEDs formed at the wafer level on a substrate wafer, each LED in said plurality of LEDs comprising a plurality of semiconductor layers;
a plurality of pedestals, each of which is in electrical contact with one of said LEDs, said plurality of pedestals disposed such that at least two pedestals are on one side of each of said LEDs; and
a coating at least partially covering said LEDs and directly on the top surface of said LEDs, at least some of said pedestals extending through and to the surface of said coating with the top surface of said pedestals exposed at the same level as the top surface of said coating, said coating having substantially the same index of refraction from the top surface of said semiconductor layers to the top surface of said coating;
wherein said coating comprises a phosphor loaded binder.
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Accused Products
Abstract
Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
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Citations
24 Claims
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1. A light emitting diode (LED) chip wafer, comprising:
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a plurality of vertical geometry LEDs formed at the wafer level on a substrate wafer, each LED in said plurality of LEDs comprising a plurality of semiconductor layers; a plurality of pedestals, each of which is in electrical contact with one of said LEDs, said plurality of pedestals disposed such that at least two pedestals are on one side of each of said LEDs; and a coating at least partially covering said LEDs and directly on the top surface of said LEDs, at least some of said pedestals extending through and to the surface of said coating with the top surface of said pedestals exposed at the same level as the top surface of said coating, said coating having substantially the same index of refraction from the top surface of said semiconductor layers to the top surface of said coating; wherein said coating comprises a phosphor loaded binder. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A light emitting diode (LED) chip wafer, comprising:
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a plurality of vertical geometry LEDs formed at the wafer level on a substrate wafer, each LED in said plurality of LEDs comprising a plurality of semiconductor layers; a plurality of pedestals, each of which is in electrical contact with one of said LEDs, said plurality of pedestals disposed such that at least two pedestals are on one side of each of said LEDs; and a coating at least partially covering said LEDs and directly on the top surface of said LEDs, at least some of said pedestals extending through and to the surface of said coating with the top surface of said pedestals exposed at the same level as the top surface of said coating, said coating having substantially the same index of refraction from the top surface of said semiconductor layers to the top surface of said coating; wherein said coating comprises scattering particles.
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Specification