Front referenced anode

• US 9,028,657 B2
• Filed: 09/10/2010
• Issued: 05/12/2015
• Est. Priority Date: 09/10/2010
• Status: Active Grant

• Current Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Original Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Inventors: Feng, Jingbin, Stowell, R. Marshall, Ghongadi, Shantinath, He, Zhian, Wilmot, Frederick Dean
• Primary Examiner(s): Ripa, Bryan D.
• Assistant Examiner(s): Cohen, Brian W
• Application Number:
  US12/879,484
• Publication Number:
  US 20120061246A1
• Time in Patent Office: 1,705 Days
• Field of Search: 204/297.14
• US Class Current: 204/297.14
• CPC Class Codes: C25D 17/001 Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
• CPC Class Codes: C25D 17/06 Suspending or supporting devices for articles to be coated
• CPC Class Codes: C25D 17/10 Electrodes , e.g. composition, counter electrode
• CPC Class Codes: C25D 17/12 Shape or form C25D17/14 takes precedence
• CPC Class Codes: C25D 21/12 Process control or regulation controlling or regulating in general G05
• CPC Class Codes: C25D 7/12 Semiconductors
• CPC Class Codes: C25D 7/123 Semiconductors first coated with a seed layer or a conductive layer
• CPC Class Codes: H01L 21/2885 using an external electrical current, i.e. electro-deposition

Abstract

Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved.

Claims

1. An electroplating apparatus, comprising:

(a) a work piece holder configured to hold a semiconductor wafer in place during electroplating;

(b) an anode support comprising an anode positioning mechanism configured for continuously adjusting the position of a consumable anode to provide a consistent distance between the consumable anode and the semiconductor wafer over a period of time during which the consumable anode is consumed;

(c) the consumable anode, wherein the consumable anode comprises a substantially planar surface that is substantially parallel to the plating surface of the semiconductor wafer during plating, wherein the substantially planar surface is at least co-extensive with the plating surface of the semiconductor wafer; and

(d) a hard stop in contact with the consumable anode.

2. The apparatus of claim 1, wherein the consumable anode comprises two or more sections that, when registered with each other, form a disk-shaped anode.

3. The apparatus of claim 2, wherein the consumable anode comprises four circular sectors having equivalent central angles.

4. The apparatus of claim 1, wherein the anode positioning mechanism comprises:

(i) a support plate, for supporting the consumable anode; and

(ii) a drive component, configured to apply upward force to the support plate sufficient to raise the anode.

5. The apparatus of claim 4, wherein the drive component comprises one or more springs that are compressed between the support plate and a bottom region of a plating chamber and/or a base plate configured to lie in the bottom region of the plating chamber.

6. The apparatus of claim 5, wherein the one or more springs are compressed between the support plate and the base plate.

7. The apparatus of claim 5, wherein the hard stop is configured to limit the distance that the consumable anode is pushed by said one or more springs to thereby maintain said consistent distance between the consumable anode and the semiconductor wafer over said period of time during which the consumable anode is consumed.

8. The apparatus of claim 7, wherein the hard stop comprises an annular structure.

9. The apparatus of claim 4, wherein the support plate is annular with a hollow occupied by a charge plate, said charge plate configured to attach to the bottom of the consumable anode and to attach to a base plate via one or more cables, wherein the base plate is configured to lie in the bottom region of the plating chamber.

10. The apparatus of claim 1, wherein the consumable anode comprises copper.

11. The apparatus of claim 1, further comprising:

(i) an ionically resistive ionically permeable element shaped and configured to be positioned between the semiconductor wafer and the consumable anode during electroplating, the ionically resistive ionically permeable element having a flat surface that is substantially parallel to and separated from a plating face of the semiconductor wafer by a gap of about 5 millimeters or less during electroplating; and

(ii) an auxiliary cathode located between the consumable anode and the ionically resistive ionically permeable element, and peripherally oriented to shape the current distribution from the consumable anode, while the auxiliary cathode is supplied with current during electroplating.

12. The apparatus of claim 1, wherein the hard stop comprises a main body and a plurality of protrusions, wherein the protrusions contact the consumable anode.

13. The apparatus of claim 1, wherein the hard stop comprises an annular structure.