Method for manufacturing semiconductor device
First Claim
Patent Images
1. A method for manufacturing a semiconductor device, comprising:
- a lift-off process that includes, for a structure including a substrate, a template layer formed on the surface of the substrate and including an AlN layer epitaxially grown on the surface of the substrate, and a device structure portion formed by stacking AlGaN semiconductor layers on the template layer, the template layer including a laterally grown layer that is formed by growing AlN or AlGaN in a lateral direction on the surface of the AlN layer after the surface of the AlN layer is formed to have irregularities;
an irradiating process for irradiating the AlN layer from a side close to the substrate with a laser light with a wavelength by which the laser light passes through the substrate and the laser light is absorbed by the AlN layer, in a state in which the AlN layer receives compressive stress from the substrate, so that the AlN layer expands more than the surface of the substrate on at least an interface between the AlN layer and the substrate so as to increase the compressive stress, in order to remove the substrate from the AlN layer; and
a cavity expanding process in which solvent is injected into a cavity generated by the lateral growth during the formation of the template layer in order to expand the cavity, before the lift-off process.
2 Assignments
0 Petitions
Accused Products
Abstract
A structure includes a substrate, a template layer formed on the surface of the substrate and including an AlN layer, and a device structure portion formed by stacking AlGaN semiconductor layers on the template layer. For the structure, the AlN layer is irradiated from a side close to the substrate with a laser light with a wavelength by which the laser light passes through the substrate and the laser light is absorbed by the AlN layer, in a state in which the AlN layer receives compressive stress from the substrate. This allows the AlN layer to expand more than the surface of the substrate on at least an interface between the AlN layer and the substrate so as to increase the compressive stress, in order to remove the substrate from the AlN layer.
11 Citations
14 Claims
-
1. A method for manufacturing a semiconductor device, comprising:
-
a lift-off process that includes, for a structure including a substrate, a template layer formed on the surface of the substrate and including an AlN layer epitaxially grown on the surface of the substrate, and a device structure portion formed by stacking AlGaN semiconductor layers on the template layer, the template layer including a laterally grown layer that is formed by growing AlN or AlGaN in a lateral direction on the surface of the AlN layer after the surface of the AlN layer is formed to have irregularities; an irradiating process for irradiating the AlN layer from a side close to the substrate with a laser light with a wavelength by which the laser light passes through the substrate and the laser light is absorbed by the AlN layer, in a state in which the AlN layer receives compressive stress from the substrate, so that the AlN layer expands more than the surface of the substrate on at least an interface between the AlN layer and the substrate so as to increase the compressive stress, in order to remove the substrate from the AlN layer; and a cavity expanding process in which solvent is injected into a cavity generated by the lateral growth during the formation of the template layer in order to expand the cavity, before the lift-off process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method for manufacturing a semiconductor device, comprising
a lift-off process that includes, for a structure including a substrate, a template layer formed on the surface of the substrate and including an AlN layer, and a device structure portion formed by stacking AlGaN semiconductor layers on the template layer, irradiating the AlN layer from a side close to the substrate with a laser light with a wavelength by which the laser light passes through the substrate and the laser light is absorbed by the AlN layer, in a state in which the AlN layer receives compressive stress from the substrate, so that the AlN layer expands more than the surface of the substrate on at least an interface between the AlN layer and the substrate so as to increase the compressive stress, in order to remove the substrate from the AlN layer; - wherein the AlN layer is formed by growing AlN in a lateral direction on the surface of the substrate that is formed to have irregularities; and
a cavity expanding process in which solvent is injected into a cavity generated by the lateral growth during the formation of the template layer in order to expand the cavity, before the lift-off process.
- wherein the AlN layer is formed by growing AlN in a lateral direction on the surface of the substrate that is formed to have irregularities; and
-
10. A method for manufacturing a semiconductor device, comprising:
-
an irradiation process that includes, for a structure including a substrate, a template layer formed on a surface of the substrate and including an AlN layer epitaxially grown on the surface of the substrate, and a device structure portion formed by stacking AlGaN semiconductor layers on the template layer; irradiating the AlN layer from a side close to the substrate with a laser light with a wavelength by which the laser light passes through the substrate and the laser light is absorbed by the AlN layer, in a state in which the AlN layer receives compressive stress from the substrate, so that the AlN layer expands more than the surface of the substrate on at least an interface between the AlN layer and the substrate so as to increase the compressive stress, in order to remove at least a part of the substrate from the AlN layer; and an etching process for removing the substrate from the AlN layer by etching an interface of the AlN layer that is bonded to a part of the substrate not removed from the AlN layer, after the irradiation process. - View Dependent Claims (11, 12, 13, 14)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeMeijo University, Nikkiso Company Limited
-
Original AssigneeMeijo University, Soko Kagaku Co Ltd
-
InventorsIwaya, Motoaki, Amano, Hiroshi, Akasaki, Isamu
-
Primary Examiner(s)Smith, Zandra
-
Assistant Examiner(s)Parker, John M
-
Application NumberUS14/001,454Publication NumberTime in Patent Office1,537 DaysField of Search438/21, 438/22, 438/478, 438/670, 257/103US Class Current438/21CPC Class CodesH01L 21/02365 Forming inorganic semicondu...H01L 21/02458 NitridesH01L 21/0254 NitridesH01L 2224/16225 the item being non-metallic...H01L 29/2003 Nitride compoundsH01L 33/007 comprising nitride compoundsH01L 33/0093 Wafer bonding; Removal of t...
