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MEMS pressure sensors and fabrication method thereof

  • US 9,029,212 B2
  • Filed: 12/03/2013
  • Issued: 05/12/2015
  • Est. Priority Date: 07/03/2013
  • Status: Active Grant
First Claim
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1. A method for fabricating a MEMS capacitive pressure sensor, comprising:

  • providing a substrate having a first region and a second region;

    forming a first dielectric layer one the substrate;

    forming a first electrode layer on the first dielectric layer;

    forming a second dielectric layer on the first electrode layer;

    etching the second dielectric layer until the first electrode layer is exposed to form a plurality of first openings;

    forming a plurality of conductive sidewalls connecting with the first electrode layer on sidewalls of the first openings;

    forming a sacrificial layer on a surface of the second dielectric layer in the peripheral region, surfaces of the conductive sidewalls and surfaces of the bottoms of the first openings;

    forming a second electrode layer with a plurality of third openings exposing a portion of the sacrificial layer on the sacrificial layer;

    removing the sacrificial layer to form a chamber between the conductive sidewalls and the second electrode layer in the first region; and

    forming a third dielectric layer with a second opening exposing the surface of a portion of the second electrode layer in the first region on the second electrode layer.

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