Methods of and apparatuses for measuring electrical parameters of a plasma process
First Claim
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1. A sensor apparatus for measuring a plasma process parameter for processing a workpiece, the sensor apparatus comprising:
- a base;
an information processor supported on or in the base;
an electrostatic charge sensor supported on or in the base and coupled to the information processor, the sensor having an electrostatic charge sensing element and a transducer coupled to the sensing element, wherein the sensing element is configured so as to provide a signal that represents a plasma process parameter measurement and wherein the transducer is configured so as to receive the signal from the sensing element and convert the signal into a second signal for input to the information processor.
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Abstract
A sensor apparatus for measuring a plasma process parameter for processing a workpiece. The sensor apparatus includes a base, an information processor supported on or in the base, and at least one sensor supported on or in the base. The at least one sensor includes at least one sensing element configured for measuring an electrical property of a plasma and may include a transducer coupled to the at least one sensing element. The transducer can be configured to receive a signal from the sensing element and convert the signal into a second signal for input to the information processor.
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Citations
14 Claims
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1. A sensor apparatus for measuring a plasma process parameter for processing a workpiece, the sensor apparatus comprising:
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a base; an information processor supported on or in the base; an electrostatic charge sensor supported on or in the base and coupled to the information processor, the sensor having an electrostatic charge sensing element and a transducer coupled to the sensing element, wherein the sensing element is configured so as to provide a signal that represents a plasma process parameter measurement and wherein the transducer is configured so as to receive the signal from the sensing element and convert the signal into a second signal for input to the information processor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A sensor apparatus for measuring a plasma process parameter for processing a workpiece, the sensor apparatus comprising:
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a base; an information processor supported on or in the base; and a sensor supported on or in the base, the sensor comprising a sensing element configured for measuring an electrical property of a plasma and a transducer coupled to the sensing element, wherein the transducer is a power transducer having a resistive load for receiving a current and a voltage from the sensing element and a thermometer arranged so as to measure changes in temperature of the resistive load, wherein the sensing element is configured to provide an output of a current and a voltage that represent a process parameter measurement to the transducer. - View Dependent Claims (11)
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12. A sensor apparatus for measuring a plasma process parameter for processing a workpiece, the sensor apparatus comprising:
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a base; an information processor supported on or in the base; and a sensor supported on or in the base, the sensor comprising a sensing element configured for measuring an electrical property of a plasma and a transducer coupled to the sensing element, wherein the transducer is an optical transducer coupled to the at least one sensing element, the transducer being configured so as to receive a signal from the sensing element and convert the signal into a second signal for input to the information processor. - View Dependent Claims (13, 14)
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Specification