Light emitting diode and method for manufacturing light emitting diodes
First Claim
1. A method for manufacturing a plurality of light emitting diodes, the method comprising:
- providing a substrate;
forming a first undoped gallium nitride (GaN) layer on the substrate, an upper surface of the first undoped GaN layer being divided into a plurality of first areas and a plurality of second areas;
etching the first areas of the upper surface of the first undoped GaN layer to form a plurality of grooves;
forming a semiconductor structure inside each of the grooves and on each of the second areas of the upper surface of the first undoped GaN layer, each semiconductor structure comprising a plurality of second undoped GaN layers and a plurality of aluminum nitride (AlN) layers alternately stacked one on the other, a topmost one of the second undoped GaN layers being located at a top side of the semiconductor structure, and a bottommost one of the AlN layers being located at a bottom side of the semiconductor structure;
etching away the AlN layers on the second areas thereby removing the AlN layers and the second undoped GaN layers from the second areas;
forming an n-type GaN layer, an active layer and a p-type GaN layer, in that sequence, on upper surfaces of the topmost second undoped GaN layers and the second areas of the upper surface of the first undoped GaN layer;
removing the AlN layers inside the grooves to form air gaps, the second undoped GaN layers and the air gaps in each groove cooperatively forming a distributed Bragg reflector; and
cutting the substrate to form a plurality of individual light emitting diodes.
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Abstract
An exemplary light emitting diode includes a substrate and a first undoped gallium nitride (GaN) layer formed on the substrate. The first undoped GaN layer defines a groove in an upper surface thereof. A distributed Bragg reflector is formed in the groove of the first undoped GaN layer. The distributed Bragg reflector includes a plurality of second undoped GaN layers and a plurality of air gaps alternately stacked one on the other. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the distributed Bragg reflector and the first undoped GaN layer. A p-type electrode and an n-type electrode are electrically connected with the p-type GaN layer and the n-type GaN layer, respectively. A method for manufacturing plural such light emitting diodes is also provided.
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Citations
9 Claims
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1. A method for manufacturing a plurality of light emitting diodes, the method comprising:
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providing a substrate; forming a first undoped gallium nitride (GaN) layer on the substrate, an upper surface of the first undoped GaN layer being divided into a plurality of first areas and a plurality of second areas; etching the first areas of the upper surface of the first undoped GaN layer to form a plurality of grooves; forming a semiconductor structure inside each of the grooves and on each of the second areas of the upper surface of the first undoped GaN layer, each semiconductor structure comprising a plurality of second undoped GaN layers and a plurality of aluminum nitride (AlN) layers alternately stacked one on the other, a topmost one of the second undoped GaN layers being located at a top side of the semiconductor structure, and a bottommost one of the AlN layers being located at a bottom side of the semiconductor structure; etching away the AlN layers on the second areas thereby removing the AlN layers and the second undoped GaN layers from the second areas; forming an n-type GaN layer, an active layer and a p-type GaN layer, in that sequence, on upper surfaces of the topmost second undoped GaN layers and the second areas of the upper surface of the first undoped GaN layer; removing the AlN layers inside the grooves to form air gaps, the second undoped GaN layers and the air gaps in each groove cooperatively forming a distributed Bragg reflector; and cutting the substrate to form a plurality of individual light emitting diodes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification