Semiconductor device and method for manufacturing the same

• US 9,029,863 B2
• Filed: 04/11/2013
• Issued: 05/12/2015
• Est. Priority Date: 04/20/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Isobe, Atsuo
• Primary Examiner(s): YUSHINA, GALINA G
• Application Number:
  US13/860,894
• Publication Number:
  US 20130277670A1
• Time in Patent Office: 761 Days
• Field of Search: 257/57, 257/59, 257/72, 257/66, 257/68, 257/71, 257/296, 257/202, 257/213, 257/250, 257/368, 257/499, 257/E27.001, 257/E27.029, 257/E27.034, 257/E27.06, 257/E27.084, 257/E29.169, 257/E29.264, 257/E28.319
• US Class Current: 257/71
• CPC Class Codes: H01L 21/70 Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof multistep manufacturing processes of assemblies consisting of a plurality of individual semiconductor or other solid state devices H01L25/00; manufacture of assemblies consisting of preformed electrical components H05K3/00, H05K13/00
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10B 12/03 Making the capacitor or connections thereto

Abstract

A variation in electrical characteristics, such as a negative shift of the threshold voltage or an increase in S value, of a fin-type transistor including an oxide semiconductor material is prevented. An oxide semiconductor film is sandwiched between a plurality of gate electrodes with an insulating film provided between the oxide semiconductor film and each of the gate electrodes. Specifically, a first gate insulating film is provided to cover a first gate electrode, an oxide semiconductor film is provided to be in contact with the first gate insulating film and extend beyond the first gate electrode, a second gate insulating film is provided to cover at least the oxide semiconductor film, and a second gate electrode is provided to be in contact with part of the second gate insulating film and extend beyond the first gate electrode.

Claims

1. A semiconductor device comprising:

a first gate electrode over a surface of a substrate, the first gate electrode extending in a first direction parallel to the surface of the substrate;

a first gate insulating film covering a top surface and side surfaces of the first gate electrode;

an oxide semiconductor film covering the first gate electrode with the first gate insulating film interposed between the top surface of the first gate electrode and the oxide semiconductor film and between the side surfaces of the first gate electrode and the oxide semiconductor film;

a second gate insulating film covering the oxide semiconductor film; and

a second gate electrode over the second gate insulating film, the second gate electrode extending in a second direction parallel to the surface of the substrate,

wherein the second direction is substantially perpendicular to the first direction.

2. The semiconductor device according to claim 1, further comprising an insulating film over the second gate insulating film and the second gate electrode.

3. The semiconductor device according to claim 1, further comprising a capacitor, the capacitor comprising:

a lower electrode film comprising the same material as the first gate electrode; and

an upper electrode film comprising the same material as the second gate electrode.

4. The semiconductor device according to claim 3,

wherein the capacitor comprises an insulating film between the lower electrode film and the upper electrode film, and

wherein the insulating film comprises the same material as the first gate insulating film or the second gate insulating film.

5. The semiconductor device according to claim 3, wherein a height of the lower electrode film is larger than a width of the lower electrode film.

6. A semiconductor device comprising:

a first gate electrode over a surface of a substrate, the first gate electrode extending in a first direction parallel to the surface of the substrate;

a first gate insulating film covering a top surface and side surfaces of the first gate electrode;

an oxide semiconductor film covering the first gate electrode with the first gate insulating film interposed between the top surface of the first gate electrode and the oxide semiconductor film and between the side surfaces of the first gate electrode and the oxide semiconductor film;

a source electrode and a drain electrode electrically connected to the oxide semiconductor film;

a second gate insulating film covering the oxide semiconductor film, the source electrode, and the drain electrode; and

a second gate electrode over the second gate insulating film, the second gate electrode extending in a second direction parallel to the surface of the substrate,

wherein the second direction is substantially perpendicular to the first direction.

7. The semiconductor device according to claim 6, wherein the second gate electrode is provided between the source electrode and the drain electrode.

8. The semiconductor device according to claim 6, further comprising an insulating film over the second gate insulating film and the second gate electrode.

9. The semiconductor device according to claim 6, further comprising a capacitor, the capacitor comprising:

a lower electrode film comprising the same material as the first gate electrode; and

an upper electrode film comprising the same material as the second gate electrode.

10. The semiconductor device according to claim 9,

wherein the capacitor comprises an insulating film between the lower electrode film and the upper electrode film, and

wherein the insulating film comprises the same material as the first gate insulating film or the second gate insulating film.

11. The semiconductor device according to claim 9, wherein a height of the lower electrode film is larger than a width of the lower electrode film.

12. A semiconductor device comprising:

a first gate electrode over a surface of a substrate, the first gate electrode extending in a first direction parallel to the surface of the substrate;

an oxide semiconductor film covering a top surface and side surfaces of the first gate electrode, the oxide semiconductor film extending in the first direction as a channel length direction;

a source electrode and a drain electrode electrically connected to the oxide semiconductor film; and

a second gate electrode over the oxide semiconductor film, the second gate electrode extending in a second direction parallel to the surface of the substrate,

wherein the second direction is substantially perpendicular to the first direction.

13. The semiconductor device according to claim 12, further comprising an insulating film over the second gate electrode.

14. The semiconductor device according to claim 12, further comprising a capacitor, the capacitor comprising:

a lower electrode film comprising the same material as the first gate electrode; and

an upper electrode film comprising the same material as the second gate electrode.

15. The semiconductor device according to claim 14,

wherein the capacitor comprises an insulating film between the lower electrode film and the upper electrode film.

16. The semiconductor device according to claim 14, wherein a height of the lower electrode film is larger than a width of the lower electrode film.

17. The semiconductor device according to claim 12, wherein the second direction is a channel width direction.