Light-emitting device

• US 9,029,896 B2
• Filed: 06/13/2013
• Issued: 05/12/2015
• Est. Priority Date: 12/31/2008
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Hsu, Chia-Liang
• Primary Examiner(s): MOORE, WHITNEY
• Application Number:
  US13/916,805
• Publication Number:
  US 20130270599A1
• Time in Patent Office: 698 Days
• Field of Search: 257/98, 257/99, 257/79, 257/88, 257/103, 257/E27.121, 257/E33.066, 257/E33.013
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/24225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/92244 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/483 Containers
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The present application is related to a light-emitting device. The present application illustrates a vertical light-emitting device in one embodiment, comprising: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate.

Claims

1. A light-emitting device, comprising:

a carrier having a top surface with a first surface area and a bottom surface with a second surface area;

a first conductive via having a top surface with a third surface area and a second conductive via having a top surface with a fourth surface area, wherein the first conductive via and the second conductive via each has only one through-hole extending from the top surface of the carrier to the bottom surface of the carrier; and

a semiconductor structure including a first conductive type semiconductor layer on the top surface of the carrier, an active layer on the first conductive type semiconductor layer and a second conductive type semiconductor layer on the active layer, wherein the semiconductor structure overlays the second conductive via;

wherein the sum of the third surface area and the fourth surface area is greater than 40% of the first surface area and smaller than the first surface area.

2. The light-emitting device according to claim 1, further comprising a conductive adhesive layer between the carrier and the semiconductor structure.

3. The light-emitting device according to claim 1, wherein the second conductive type semiconductor layer connects electrically with the second conductive via.

4. The light-emitting device according to claim 1, wherein the top surface of the first conductive via, the top surface of the second conductive via, and the top surface of the carrier are substantially coplanar.

5. The light-emitting device according to claim 1, wherein the first surface area is substantially the same as or smaller than the second surface area.

6. The light-emitting device according to claim 1, wherein the first surface area is larger than the second surface area.

7. The light-emitting device according to claim 1, wherein the third surface area is substantially the same as or smaller than the fourth surface area.

8. The light-emitting device according to claim 1, wherein the carrier further comprising a tilted sidewall.

9. The light-emitting device according to claim 8, wherein the tilted sidewall forms an angle between 15 degree and 75 degree with the bottom surface of the carrier, wherein the bottom surface is farther from the semiconductor structure than the top surface.

10. The light-emitting device according to claim 1, wherein the active layer of the semiconductor structure has a fifth surface area greater than 30% of the first surface area and smaller than the first surface area.

11. The light-emitting device according to claim 1, wherein the carrier is non-conductive.

12. The light-emitting device according to claim 1, wherein the semiconductor structure comprises III-nitride material or III-phosphide material.

13. The light-emitting device according to claim 1, wherein the first conductive via and the second conductive via are bonding pads for being bonded to metal bumps.

14. The light-emitting device according to claim 1, further comprising a conductive line formed on a sidewall of the semiconductor structure and electrically connecting the first conductive via to the first conductive type semiconductor layer.

15. The light-emitting device according to claim 1, further comprising an insulation structure between a sidewall of the semiconductor structure and the conductive line.

16. The light-emitting device according to claim 1, wherein the carrier has a thickness smaller than 200 μ

m.

17. The light-emitting device according to claim 1, wherein the carrier is made of flexible material.

18. The light-emitting device according to claim 14, further comprising a protection layer on the conductive line and the semiconductor structure.

19. The light-emitting device according to claim 1, wherein the first conductive via and the second conductive via are capable of reflecting a light emitted from the semiconductor structure.

20. The light-emitting device according to claim 1, wherein the semiconductor structure does not overlay the first conductive via.