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Semiconductor light emitting device

  • US 9,029,906 B2
  • Filed: 06/27/2014
  • Issued: 05/12/2015
  • Est. Priority Date: 11/14/2008
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device comprising:

  • a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first and second semiconductor layers;

    a conductive support member disposed under the second conductive semiconductor layer;

    an insulating layer disposed between the second conductive semiconductor layer and the conductive support member; and

    a stepped conductive layer disposed between the second conductive semiconductor layer and the conductive support member,wherein the stepped conductive layer includes a plurality of lower parts spaced apart from each other and a plurality of upper parts bent from at least one of the lower parts,wherein the plurality of upper parts of the stepped conductive layer are directly contacted with the second conductive semiconductor layer,wherein the plurality of lower parts of the stepped conductive layer are disposed between the insulating layer and the conductive support member, andwherein the insulating layer is laterally disposed between the plurality of upper parts.

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