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Semiconductor device

  • US 9,029,918 B2
  • Filed: 09/14/2011
  • Issued: 05/12/2015
  • Est. Priority Date: 09/15/2010
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device, comprising:

  • a first electrode;

    a first conductivity-type base layer provided on the first electrode;

    a second conductivity-type base layer provided on the first conductivity-type base layer;

    a first semiconductor layer of the first conductivity-type provided on the second conductivity-type base layer;

    a gate electrode extending from the first semiconductor layer into the second conductivity-type base layer;

    a gate insulating film provided between the gate electrode and the first semiconductor layer, between the gate electrode and the second conductivity-type base layer, and between the gate electrode and the first conductivity-type base layer;

    a second semiconductor layer of the second conductivity-type selectively provided in the first conductivity-type base layer, the second semiconductor layer contacting the gate insulating film;

    a second electrode provided in the second semiconductor layer, the second electrode directly contacting the second semiconductor layer and the gate insulating film; and

    a third electrode provided on the first semiconductor layer and being electrically connected to the first semiconductor layer and the second electrode.

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