Power semiconductor device and method therefor
First Claim
1. A semiconductor device comprising:
- a plurality of transistors, wherein each transistor of the plurality of transistors has a gate, a drain region, and a source region, wherein the gates of the plurality of transistors are coupled to each other with a mesh structure, and wherein the source regions and at least a portion of the drain regions are in a semiconductor material; and
a layer of conductive material over a first surface of the semiconductor material, wherein at least a portion of the mesh structure is over the layer of conductive material, and wherein the layer of conductive material is substantially between the mesh structure and the drain regions to thereby reduce gate-to-drain capacitance.
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Accused Products
Abstract
A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a plurality of transistors, wherein each transistor of the plurality of transistors has a gate, a drain region, and a source region, wherein the gates of the plurality of transistors are coupled to each other with a mesh structure, and wherein the source regions and at least a portion of the drain regions are in a semiconductor material; and a layer of conductive material over a first surface of the semiconductor material, wherein at least a portion of the mesh structure is over the layer of conductive material, and wherein the layer of conductive material is substantially between the mesh structure and the drain regions to thereby reduce gate-to-drain capacitance. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a plurality of transistors, wherein each transistor of the plurality of transistors has a gate, a drain region, and a source region, wherein the gates of the plurality of transistors are coupled to each other using a gate interconnect layer, and wherein the source regions and at least a portion of the drain regions are in a semiconductor material; and a mesh-shaped layer of conductive material over a first surface of the semiconductor material substantially between the drain region and the gate interconnect layer to thereby reduce gate-to-drain capacitance. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a plurality of transistors, wherein each transistor of the plurality of transistors has a gate, a drain region, and a source region, wherein the gates of the plurality of transistors are coupled to each other with a mesh structure, and wherein the source regions and at least a portion of the drain regions are in a semiconductor material; a layer of conductive material over a first surface of the semiconductor material, wherein at least a portion of the mesh structure is over the layer of conductive material, and wherein the layer of conductive material is substantially between the mesh structure and the drain regions to thereby reduce gate-to-drain capacitance; and a gate contact coupled to the mesh structure, wherein the gate contact includes a gate interconnection that is disposed external to the mesh structure and that completely surrounds the mesh structure, and wherein the gate contact is coupled to the gates of the plurality of transistors of the mesh structure via one or more gate pathways. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification