Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
First Claim
1. A memory cell arrangement, comprising:
- a substrate;
at least one memory cell, comprising a charge storing memory cell structure, a select structure, a first source/drain region located proximate to the select structure and a second source/drain region located distant from the select structure, wherein the select structure comprises a select gate configured as a spacer and laterally disposed from a sidewall of the charge storing memory cell structure;
a first doping well and a second doping well, wherein the charge storing memory cell structure is arranged in or above the first doping well, the first doping well is arranged within the second doping well and the second doping well is arranged within the substrate;
a bitline coupled to the first source/drain region located proximate to the select structure; and
a control circuit coupled with the memory cell and configured to control the memory cell such that the charge storing memory cell structure is programmed and erased by charging and discharging the charge storing memory cell structure via at least the first doping well,wherein the control circuit is configured to program the charge storing memory cell structure by source side injection comprising applying electrical voltages to the select structure, the charge storing memory cell structure, the first source/drain region through the bitline and second source/drain region, such that electrons in a channel region located between the first and second source/drain regions are accelerated from the first source/drain region located proximate to the select structure towards the second source/drain region located distant from the select structure and are injected into the charge storing memory cell structure from a part of the channel region located under the charge storing memory cell structure and proximate to the select structure, andwherein the control circuit is configured to erase the charge storing memory cell structure by Fowler-Nordheim erase via at least the first doping well.
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Abstract
In an embodiment of the invention, a memory cell arrangement includes a substrate and at least one memory cell including a charge storing memory cell structure and a select structure. The memory cell arrangement further includes a first doping well, a second doping well and a third doping well arranged within the substrate, wherein the charge storing memory cell structure is arranged in or above the first doping well, the first doping well is arranged within the second doping well, and the second doping well is arranged within the third doping well. The memory cell arrangement further includes a control circuit coupled with the memory cell and configured to control the memory cell such that the charge storing memory cell structure is programmed or erased by charging or discharging the charge storing memory cell structure via at least the first doping well.
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Citations
18 Claims
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1. A memory cell arrangement, comprising:
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a substrate; at least one memory cell, comprising a charge storing memory cell structure, a select structure, a first source/drain region located proximate to the select structure and a second source/drain region located distant from the select structure, wherein the select structure comprises a select gate configured as a spacer and laterally disposed from a sidewall of the charge storing memory cell structure; a first doping well and a second doping well, wherein the charge storing memory cell structure is arranged in or above the first doping well, the first doping well is arranged within the second doping well and the second doping well is arranged within the substrate; a bitline coupled to the first source/drain region located proximate to the select structure; and a control circuit coupled with the memory cell and configured to control the memory cell such that the charge storing memory cell structure is programmed and erased by charging and discharging the charge storing memory cell structure via at least the first doping well, wherein the control circuit is configured to program the charge storing memory cell structure by source side injection comprising applying electrical voltages to the select structure, the charge storing memory cell structure, the first source/drain region through the bitline and second source/drain region, such that electrons in a channel region located between the first and second source/drain regions are accelerated from the first source/drain region located proximate to the select structure towards the second source/drain region located distant from the select structure and are injected into the charge storing memory cell structure from a part of the channel region located under the charge storing memory cell structure and proximate to the select structure, and wherein the control circuit is configured to erase the charge storing memory cell structure by Fowler-Nordheim erase via at least the first doping well. - View Dependent Claims (2, 3, 4, 5, 6, 7, 17)
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8. A memory array, comprising:
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a plurality of memory cells, each memory cell comprising a charge storing memory cell structure, a select structure, a first source/drain region arranged proximate to the select structure and a second source/drain region located distant from the select structure of the memory cell, and first and second doping wells arranged within a substrate, the charge storing memory cell structure being arranged in or above the first doping well, the first doping well being arranged within the second doping well, and the second doping well being arranged within the substrate, the select structure comprising a select gate configured as a spacer and laterally disposed from a sidewall of the charge storing memory cell structure; a plurality of bitlines, each bitline being coupled to at least two of the first source/drain regions arranged proximate to the select structures of the memory cells; and control circuitry coupled with the plurality of memory cells and configured to control the memory cells such that the charge storing memory cell structure of each memory cell is programmed or erased by charging or discharging the charge storing memory cell structure of the respective memory cell via at least the first doping well, wherein the control circuitry is configured to control the memory cells such that the charge storing memory cell structure of each memory cell is programmed by applying electrical voltages to the select structure, the charge storing memory cell structure and the first and second source/drain regions of the respective memory cell, such that electrons in a channel region located between the first and second source/drain regions are accelerated from the first source/drain region located proximate to the select structure towards the second source/drain region located distant from the select structure and are injected into the charge storing memory cell structure from a part of the channel region located under the charge storing memory cell structure and proximate to the select structure. - View Dependent Claims (9, 10, 11, 18)
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12. A memory array, comprising:
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a plurality of memory cells, each memory cell comprising a charge storing memory cell structure, a select structure, a first source/drain region arranged proximate to the select structure and a second source/drain region located distant from the select structure of the memory cell, and first and second doping wells arranged within a substrate, the charge storing memory cell structure being arranged in or above the first doping well, the first doping well being arranged within the second doping well, and the second doping well being arranged within the substrate, the select structure comprising a select gate configured as a spacer and laterally disposed from a sidewall of the charge storing memory cell structure; a plurality of bitlines, each bitline being coupled to at least two of the first source/drain regions arranged proximate to the select structures of the memory cells; and control circuitry coupled with the plurality of memory cells and configured to control the memory cells such that the charge storing memory cell structure of each memory cell is programmed or erased by charging or discharging the charge storing memory cell structure of the respective memory cell via at least the first doping well, wherein the control circuitry is configured to control the memory cells such that the charge storing memory cell structure of each memory cell is programmed by applying first and second electrical voltages, respectively, to the first and second source/drain regions of the respective memory cell, the second electrical voltage being higher than the first electrical voltage, and applying third and fourth electrical voltages, respectively, to the select structure and the charge storing memory cell structure of the respective memory cell, the third and fourth electrical voltages being positive and the fourth electrical voltage being higher than the third electrical voltage. - View Dependent Claims (13, 14, 15, 16)
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Specification