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Semiconductor device with a low-k spacer and method of forming the same

  • US 9,034,701 B2
  • Filed: 01/20/2012
  • Issued: 05/19/2015
  • Est. Priority Date: 01/20/2012
  • Status: Active Grant
First Claim
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1. A method of forming a device, comprising:

  • providing a semiconductor substrate;

    forming a dummy gate stack on the semiconductor substrate;

    forming dummy spacers adjacent to the dummy gate stack;

    forming raised source/drain (RSD) regions on the semiconductor substrate adjacent to the dummy spacers;

    forming an ILD layer on the dummy spacers and the RSD regions;

    removing the dummy gate stack and the dummy spacers;

    forming low-k spacers adjacent to the RSD regions, wherein the low-k spacers are embedded in the ILD layer; and

    forming a replacement gate stack on the semiconductor substrate, the replacement gate stack including a gate dielectric layer on the semiconductor substrate and a gate conductor layer on the gate dielectric layer.

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