Method of forming a micro device transfer head with silicon electrode
First Claim
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1. A method of forming a micro device transfer head array comprising:
- etching a top silicon layer of a silicon-on-insulator stack to form a silicon interconnect and a plurality of silicon electrodes electrically connected with the silicon interconnect, each silicon electrode including a mesa structure that protrudes above the silicon interconnect; and
forming a dielectric layer over the plurality of silicon electrodes.
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Abstract
A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.
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Citations
20 Claims
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1. A method of forming a micro device transfer head array comprising:
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etching a top silicon layer of a silicon-on-insulator stack to form a silicon interconnect and a plurality of silicon electrodes electrically connected with the silicon interconnect, each silicon electrode including a mesa structure that protrudes above the silicon interconnect; and forming a dielectric layer over the plurality of silicon electrodes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification