Phosphors for use with LEDs and other optoelectronic devices
First Claim
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1. A phosphor for use with an optoelectronic device, said phosphor comprising:
- one or more lamellae separated from a bulk material, said bulk material being a lamellar semiconductor having at least one van der Waals cleavage plane and being configured to be cleavable along said at least one van der Waals cleavage plane into a plurality of said one or more lamellae, and wherein said one or more lamellae are tuned to the optoelectronic device so as to provide a photoluminescence output.
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Abstract
Phosphors fabricated from one or more layers of a naturally lamellar or fabricated lamellar semiconductor that is combined with a substrate. One or more of the layers of the lamellar semiconductor are separated from bulk material. The one or more layers are transformed into a phosphor for use with one or more light-emitting devices for the purpose of modifying the light emitted by the light-emitting device(s). Such transformation can be effected in a variety of ways, such as precise thinning or thickening of the removed layer(s) and/or intercalating one or more species of ions into the layer(s) that function as phosphors.
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Citations
66 Claims
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1. A phosphor for use with an optoelectronic device, said phosphor comprising:
- one or more lamellae separated from a bulk material, said bulk material being a lamellar semiconductor having at least one van der Waals cleavage plane and being configured to be cleavable along said at least one van der Waals cleavage plane into a plurality of said one or more lamellae, and wherein said one or more lamellae are tuned to the optoelectronic device so as to provide a photoluminescence output.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of producing a phosphor for modifying an electromagnetic input, the method comprising:
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providing a bulk lamellar semiconductor having at least one van der Waals cleavage plane and a first surface; bonding a permanent substrate to the first surface of the bulk lamellar semiconductor; inducing a cleavage in the bulk lamellar semiconductor so as to generate a first cleaved semiconductor portion and a second cleaved semiconductor portion; and detaching the permanent substrate and the first cleaved semiconductor portion from the second cleaved semiconductor portion, wherein the first cleaved semiconductor portion is a lamellae of the phosphor and wherein the lamellae is designed and configured to modify the electromagnetic input. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30)
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31. A method of fabricating a phosphor, comprising:
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providing a lamellar semiconductor having at least one van der Waals cleavage plane and at least one detachable lamella; separating the detachable lamella; and including the detachable lamella with an optoelectronic device as an optical functional element of the optoelectronic device. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53)
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54. A method of fabricating an optoelectronic device including a phosphor as an optically functional element, the method comprising:
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providing a lamellar semiconductor having at least one van der Waals cleavage plane and a crystalline semiconductor lamella, wherein the lamellar semiconductor is configured to allow the crystalline semiconductor lamella to be separated therefrom; separating the crystalline semiconductor lamella from the lamellar semiconductor; including the crystalline semiconductor lamella with the optoelectronic device as the phosphor; and providing the optically functional element with a predetermined thickness based on the optical function of the optoelectrically functional element. - View Dependent Claims (55, 56, 57, 58, 59, 60, 61, 62, 63)
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64. A phosphor for use with an optoelectronic device, said phosphor comprising:
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a layered substrate, wherein at least a portion of the layered substrate has been separated from a lamellar semiconductor having at least one van der Waals cleavage plane, the layered substrate including one or more of an insulator, a semiconductor, and a conductor; a layer of wide band gap II-VI materials disposed on said layered substrate, wherein said layer of wide band gap II-VI materials is designed and configured as a function of the optoelectronic device to photoluminesce when subjected to an electromagnetic input.
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65. A phosphor for use with an optoelectronic device, said phosphor comprising:
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a layered substrate, wherein at least a portion of the layered substrate has been separated from a lamellar semiconductor having at least one van der Waals cleavage plane, the layered substrate including one or more of an insulator, a semiconductor, and a conductor; a barrier layer disposed on said layered substrate; and a quantum confining layer disposed on said barrier layer, wherein said layered substrate, barrier layer, and quantum confining layer are designed and configured as a function of the optoelectronic device to photoluminesce when subjected to an electromagnetic input.
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66. A phosphor for use with an optoelectronic device, said phosphor comprising:
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a permanent substrate; and a lamellar layer separated from a lamellar semiconductor having at least one van der Waals cleavage plane, the lamellar layer including one or more of an insulator, a semiconductor, and a conductor disposed on said permanent substrate, wherein said lamellar layer is intercalated with one or more rare earth elements and wherein said lamellar layer and said one or more rare earth elements is tuned relative to the optoelectronic device so as to photoluminesce when subjected to an electromagnetic input.
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Specification