Gate dielectric of semiconductor device

• US 9,035,373 B2
• Filed: 12/12/2013
• Issued: 05/19/2015
• Est. Priority Date: 07/21/2011
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Lee, Da-Yuan, Hsu, Kuang-Yuan
• Primary Examiner(s): Such, Matthew W
• Assistant Examiner(s): TYNES JR., LAWRENCE C
• Application Number:
  US14/104,656
• Publication Number:
  US 20140091400A1
• Time in Patent Office: 523 Days
• Field of Search: 257/324
• US Class Current: 257/324
• CPC Class Codes: H01L 21/823842 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
• CPC Class Codes: H01L 21/823857 with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/4966 the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/511 with a compositional variation, e.g. multilayer structures H01L29/516 takes precedence
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence

Abstract

A method of fabricating a semiconductor device having a different gate structure in each of a plurality of device regions is described. The method may include a replacement gate process. The method includes forming a hard mask layer on oxide layers formed on one or more regions of the substrate. A high-k gate dielectric layer is formed on each of the first, second and third device regions. The high-k gate dielectric layer may be formed directly on the hard mask layer in a first and second device regions and directly on an interfacial layer formed in a third device region. A semiconductor device including a plurality of devices (e.g., transistors) having different gate dielectrics formed on the same substrate is also described.

Claims

1. A semiconductor device, comprising:

a semiconductor substrate;

a first gate structure of an input/output (I/O) device formed on the semiconductor substrate, wherein the first gate structure includes a first oxide layer, a nitride layer on the first oxide layer, and a high-k dielectric layer on the nitride layer;

a second gate structure of a low-power device formed on the semiconductor device, wherein the second gate structure includes a second oxide layer, the nitride layer on the second oxide layer, and the high-k dielectric layer disposed directly on the nitride layer, wherein the first oxide layer is thicker than the second oxide layer;

a third gate structure formed on the semiconductor substrate, wherein the third gate structure includes an interfacial layer and the high-k dielectric layer disposed on the interfacial layer, wherein the first oxide layer is thicker than the interfacial layer; and

a first isolation structure disposed in the semiconductor substrate and interposing the first and second gate structures and a second isolation structure disposed in the semiconductor substrate and interposing the second and third gate structures.

2. The semiconductor device of claim 1, further comprising:

a work function layer formed on the high-k dielectric layer of each of the first, second and third gate structures.

3. The semiconductor device of claim 1, wherein the interfacial layer includes a first high-k dielectric material and the high-k dielectric layer includes a second high-k dielectric material, the first and second high-k dielectric materials being different.

4. The semiconductor device of claim 1, wherein in the nitride layer is silicon nitride.

5. The semiconductor device of claim 1, wherein the first oxide layer is greater in thickness than the second oxide layer.

6. A semiconductor device, comprising:

a semiconductor substrate having first, second and third device regions;

a first gate structure in the first region, wherein the first gate structure includes a first dielectric layer, a hard mask layer formed on the first dielectric layer, and a high-k dielectric layer formed on the hard mask layer;

a second gate structure in the second region, wherein the second gate structure includes a second dielectric layer, the hard mask layer formed on the second dielectric layer, and the high-k dielectric layer formed on the hard mask layer, wherein the first dielectric layer is thicker than the second dielectric layer, wherein the hard mask layer is a metal nitride;

a third gate structure in the third region, wherein the third gate structure includes a third dielectric layer and the high-k dielectric layer formed on the third dielectric layer, wherein the third dielectric layer is different in composition than the second dielectric layer, and

isolation structures in the semiconductor substrate and interposing each of the first region, the second region, and the third region.

7. The device of claim 6, wherein the first region is an input/output (I/O) region of the semiconductor substrate including I/O devices.

8. The device of claim 6, wherein the second region is a low-power region of the semiconductor substrate including low-power devices, wherein the second gate structure is associated with a low-power device in the low-power region.

9. The device of claim 6, wherein the hard mask layer is silicon nitride.

10. The device of claim 6, wherein the hard mask layer is formed directly on the first dielectric layer of the first gate structure and directly on the second dielectric layer of the second gate structure.

11. The device of claim 6, wherein the high-k dielectric layer is formed directly on the hard mask layer of the first gate structure and the second gate structure.

12. The device of claim 6, wherein each of the first, second and third gate structures further include at least one work function layer.

13. A device, comprising:

a first gate structure of an input/output transistor on a substrate and including a first dielectric layer, a silicon nitride layer on the first dielectric layer, a high-k dielectric layer on the silicon nitride layer, and a work function layer on the high-k dielectric layer;

a second gate structure of a low power transistor on the substrate and including a second dielectric layer, the silicon nitride layer on the second dielectric layer, the high-k dielectric layer disposed directly on the silicon nitride layer, and the work function layer on the high-k dielectric layer, wherein the second dielectric layer has a thickness less than the first dielectric layer;

a third gate structure of one of a PMOS and an NMOS transistor, the third gate structure including a third dielectric layer, the high-k dielectric layer disposed on the third dielectric layer, and the work function layer on the high-k dielectric layer and wherein the high-k dielectric layer extends to a top surface of each of the first, second and third gate structures; and

a first shallow trench isolation feature between the first and second gate structures and a second shallow trench isolation feature between the second and third gate structures;

wherein the first and second gate structures are electrically coupled.