Semiconductor device with inductor having interleaved windings for controlling capacitance

• US 9,035,423 B1
• Filed: 08/20/2014
• Issued: 05/19/2015
• Est. Priority Date: 12/25/2013
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Tsukahara, Yoshihiro, Ishida, Takao
• Primary Examiner(s): Menz, Laura
• Assistant Examiner(s): Malek, Maliheh
• Application Number:
  US14/463,841
• Time in Patent Office: 272 Days
• US Class Current: 257/531
• CPC Class Codes: H01F 17/0013 with stacked layers
• CPC Class Codes: H01F 2017/0073 with a special conductive pattern, e.g. flat spiral
• CPC Class Codes: H01F 27/2804 Printed windings
• CPC Class Codes: H01F 5/003 Printed circuit coils
• CPC Class Codes: H01L 28/10 Inductors

Abstract

A first spiral inductor is provided on the semiconductor substrate. A dielectric film covers the first spiral inductor. A second spiral inductor is provided on the dielectric film. A connecting portion penetrates the dielectric film and electrically connects a first inner end portion of the first spiral inductor to a second inner end portion of the second spiral inductor. Winding direction of the first spiral inductor from a first outer end portion toward the first inner end portion is the same as the winding direction of the second spiral inductor from a second inner end portion toward the second outer end portion. A wire of the second spiral inductor is disposed opposite the first spiral inductor with the dielectric film between them. The wire of the second spiral inductor is disposed in gaps between windings of the first spiral inductor, when viewed in a plan view.

Claims

1. A semiconductor device comprising:

a semiconductor substrate;

a first inductor on the semiconductor substrate and including a plurality of spirally-arranged windings of a first metal conductor, wherein adjacent windings of the first metal conductor of the first inductor are mutually spaced apart and are wound from an outside winding of the first inductor, located at a periphery of the first inductor, to an inside winding of the first inductor, located within the spirally-arranged windings of the first inductor, and including a first outer end connected to the outside winding of the first inductor and located at the periphery of the first inductor, and a first inner end connected to the inside winding of the first inductor and located within the first inductor;

a dielectric film covering the first inductor;

a second inductor on the dielectric film and including a plurality of spirally-arranged windings of a second metal conductor, wherein adjacent windings of the second metal conductor are mutually spaced apart and are wound from an outside winding of the second inductor, located at a periphery of the second inductor, to an inside winding of the second inductor, located within the spirally-arranged windings of the second inductor, and including a second outer end connected to the outside winding of the second inductor and located at the periphery of the second inductor, and a second inner end connected to the inside winding of the second inductor and located within the second inductor; and

a connecting portion penetrating the dielectric film and electrically connecting the first inner end to the second inner end, wherein

winding direction of the first inductor, from the first outer end toward the first inner end, is the same as winding direction of the second inductor, from the second inner end toward the second outer end,

some of the spirally-arranged windings of the second inductor are located on the dielectric film directly opposite corresponding spirally-arranged windings of the first inductor, and

some of the spirally-arranged windings of the second inductor are located on the dielectric film opposite the gaps between adjacent windings of the first inductor, and between corresponding pairs of the spirally-arranged windings of the first inductor, whereby capacitance between the windings of the first and second inductors is controlled.

2. The semiconductor device according to claim 1, wherein the spirally-arranged windings of both the first and second inductors include a plurality of linear conductor portions.

3. The semiconductor device according to claim 1, further comprising a semiconductor circuit on the semiconductor substrate and connected to at least one of the first and second outer ends.

4. A semiconductor device comprising:

a semiconductor substrate;

a first inductor on the semiconductor substrate and including a plurality of spirally-arranged windings of a first metal conductor, wherein adjacent windings of the first metal conductor of the first inductor are mutually spaced apart and are wound from an outside winding of the first inductor, located at a periphery of the first inductor, to an inside winding of the first inductor, located within the spirally-arranged windings of the first inductor, and including a first outer end connected to the outside winding of the first inductor and located at the periphery of the first inductor, and a first inner end connected to the inside winding of the first inductor and located within the first inductor;

a dielectric film covering the first inductor;

a second inductor on the dielectric film and including a plurality of spirally-arranged windings of a second metal conductor, wherein adjacent windings of the second metal conductor are mutually spaced apart and are wound from an outside winding of the second inductor, located at a periphery of the second inductor, to an inside winding of the second inductor, located within the spirally-arranged windings of the second inductor, and including a second outer end connected to the outside winding of the second inductor and located at the periphery of the second inductor, and a second inner end connected to the inside winding of the second inductor and located within the second inductor; and

a connecting portion penetrating the dielectric film and electrically connecting the first inner end to the second inner end, wherein

winding direction of the first inductor, from the first outer end toward the first inner end, is the same as winding direction of the second inductor, from the second inner end toward the second outer end,

some of the spirally-arranged windings of the second inductor are located on the dielectric film, partially directly opposite corresponding spirally-arranged windings of the first inductor, and partially opposite the gaps between adjacent windings of the first inductor, and

some of the spirally-arranged windings of the second inductor are located on the dielectric film, in the gaps between adjacent windings of the first inductor, and between corresponding pairs of the spirally-arranged windings of the first inductor, whereby capacitance between the windings of the first and second inductors is controlled.

5. The semiconductor device according to claim 4, wherein the spirally-arranged windings of both the first and second inductors include a plurality of linear conductor portions.

6. The semiconductor device according to claim 4, further comprising a semiconductor circuit on the semiconductor substrate and connected to at least one of the first and second outer ends.

7. A semiconductor device comprising:

a semiconductor substrate;

a first inductor on the semiconductor substrate and including a plurality of spirally-arranged windings of a first metal conductor, wherein adjacent windings of the first metal conductor of the first inductor are mutually spaced apart and are wound from an outside winding of the first inductor, located at a periphery of the first inductor, to an inside winding of the first inductor, located within the spirally-arranged windings of the first inductor, and including a first outer end connected to the outside winding of the first inductor and located at the periphery of the first inductor, and a first inner end connected to the inside winding of the first inductor and located within the first inductor;

a dielectric film covering the first inductor;

a second inductor on the dielectric film and including a plurality of spirally-arranged windings of a second metal conductor, wherein adjacent windings of the second metal conductor are mutually spaced apart and are wound from an outside winding of the second inductor, located at a periphery of the second inductor, to an inside winding of the second inductor, located within the spirally-arranged windings of the second inductor, and including a second outer end connected to the outside winding of the second inductor and located at the periphery of the second inductor, and a second inner end connected to the inside winding of the second inductor and located within the second inductor; and

a connecting portion penetrating the dielectric film and electrically connecting the first inner end to the second inner end, wherein

winding direction of the first inductor, from the first outer end toward the first inner end, is the same as winding direction of the second inductor, from the second inner end toward the second outer end, and

the spirally-arranged windings of the second inductor are located on the dielectric film, in the gaps between adjacent windings of the first inductor, and between corresponding pairs of the spirally-arranged windings of the first inductor, with sidewalls of the windings of the first inductor directly opposite corresponding sidewalls of the windings of the second inductor and separated by the dielectric film.

8. The semiconductor device according to claim 7, wherein the spirally-arranged windings of both the first and second inductors include a plurality of linear conductor portions.

9. The semiconductor device according to claim 7, further comprising a semiconductor circuit on the semiconductor substrate and connected to at least one of the first and second outer ends.