×

Semiconductor fin on local oxide

  • US 9,035,430 B2
  • Filed: 08/29/2012
  • Issued: 05/19/2015
  • Est. Priority Date: 08/29/2012
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor structure comprising:

  • a single crystalline semiconductor material portion;

    a semiconductor oxide portion located on said single crystalline semiconductor material portion and including a first semiconductor oxide portion comprising an oxide of a first semiconductor material and a second semiconductor oxide portion contacting a top surface of said first semiconductor oxide portion and comprising an oxide of a second semiconductor material that is different from said first semiconductor material; and

    a semiconductor fin comprising said second semiconductor material,wherein said second semiconductor oxide portion underlies at least a portion of said semiconductor fin such that a bottom surface of said semiconductor fin contacts a top surface of said second semiconductor oxide portion, andwherein an entirety of a bottom surface of said second semiconductor oxide portion contacts said top surface of said first semiconductor oxide portion.

View all claims
  • 7 Assignments
Timeline View
Assignment View
    ×
    ×