Semiconductor fin on local oxide

• US 9,035,430 B2
• Filed: 08/29/2012
• Issued: 05/19/2015
• Est. Priority Date: 08/29/2012
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Vega, Reinaldo A., Aquilino, Michael V., Jaeger, Daniel J.
• Primary Examiner(s): Page, Dale E
• Application Number:
  US13/597,799
• Publication Number:
  US 20140061862A1
• Time in Patent Office: 993 Days
• Field of Search: 257/192, 257/616, 257/327, 257/E29.225, 257/E21.409
• US Class Current: 257/616
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/32 using masks
• CPC Class Codes: H01L 21/76208 using auxiliary pillars in the recessed region, e.g. to form LOCOS over extended areas
• CPC Class Codes: H01L 21/76281 Lateral isolation by selective oxidation of silicon
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

A semiconductor substrate including a first epitaxial semiconductor layer is provided. The first epitaxial semiconductor layer includes a first semiconductor material, and can be formed on an underlying epitaxial substrate layer, or can be the entirety of the semiconductor substrate. A second epitaxial semiconductor layer including a second semiconductor material is epitaxially formed upon the first epitaxial semiconductor layer. Semiconductor fins including portions of the second single crystalline semiconductor material are formed by patterning the second epitaxial semiconductor layer employing the first epitaxial semiconductor layer as an etch stop layer. At least an upper portion of the first epitaxial semiconductor layer is oxidized to provide a localized oxide layer that electrically isolates the semiconductor fins. The first semiconductor material can be selected from materials more easily oxidized relative to the second semiconductor material to provide a uniform height for the semiconductor fins after formation of the localized oxide layer.

Claims

1. A semiconductor structure comprising:

a single crystalline semiconductor material portion;

a semiconductor oxide portion located on said single crystalline semiconductor material portion and including a first semiconductor oxide portion comprising an oxide of a first semiconductor material and a second semiconductor oxide portion contacting a top surface of said first semiconductor oxide portion and comprising an oxide of a second semiconductor material that is different from said first semiconductor material; and

a semiconductor fin comprising said second semiconductor material,

wherein said second semiconductor oxide portion underlies at least a portion of said semiconductor fin such that a bottom surface of said semiconductor fin contacts a top surface of said second semiconductor oxide portion, and

wherein an entirety of a bottom surface of said second semiconductor oxide portion contacts said top surface of said first semiconductor oxide portion.

2. The semiconductor structure of claim 1, wherein an interface between said second semiconductor oxide portion and said semiconductor fin is a V-shaped groove.

3. The semiconductor structure of claim 1, wherein said first semiconductor material has a greater oxidation rate than said second semiconductor material.

4. The semiconductor structure of claim 3, wherein said first semiconductor material comprises a silicon germanium alloy, and said second semiconductor material comprises silicon.

5. The semiconductor structure of claim 3, wherein said first semiconductor material comprises germanium or a silicon germanium alloy, and said second semiconductor material comprises another silicon germanium alloy having a greater atomic concentration of silicon than said first semiconductor material.

6. The semiconductor structure of claim 1, wherein said single crystalline semiconductor material portion is a substrate semiconductor layer comprising a third single crystalline semiconductor material that is different from said first single crystalline semiconductor material.

7. The semiconductor structure of claim 6, wherein said semiconductor oxide portion comprises a third semiconductor oxide portion underlying said first semiconductor oxide portion and comprising an oxide of said third single crystalline semiconductor material.

8. The semiconductor structure of claim 1, wherein said single crystalline semiconductor material portion comprises said first semiconductor material.

9. The semiconductor structure of claim 8, further comprising a substrate semiconductor layer comprising a third semiconductor material that is different from said first semiconductor material and located underneath said single crystalline semiconductor material portion.

10. The semiconductor structure of claim 9, wherein a non-flat interface between said semiconductor oxide portion and said single crystalline semiconductor material portion is vertically spaced from a flat interface between said single crystalline semiconductor material portion and said substrate semiconductor layer.

11. The semiconductor structure of claim 1, wherein said semiconductor fin includes a pair of vertical sidewalls that are parallel to each other.

12. The semiconductor structure of claim 1, wherein said semiconductor fin is vertically spaced from said single crystalline semiconductor material portion by said semiconductor oxide portion.

13. The semiconductor structure of claim 1, wherein said second semiconductor oxide portion has a non-uniform thickness in a vertical direction.

14. The semiconductor structure of claim 1, wherein a topmost portion of said semiconductor oxide portion protrudes outside an area of said semiconductor fin above a horizontal plane including a bottommost portion of said semiconductor fin.

15. The semiconductor structure of claim 8, further comprising a non-flat interface between said semiconductor oxide portion and said single crystalline semiconductor material portion.

16. The semiconductor structure of claim 15, wherein a topmost portion of said single crystalline semiconductor material portion is located in a region within an area of said semiconductor fin.

17. The semiconductor structure of claim 1, wherein a top surface of said semiconductor oxide portion is recessed around an entire periphery of said semiconductor fin.

18. The semiconductor structure of claim 1, wherein said top surface of said first semiconductor oxide portion is a non-flat surface.

19. The semiconductor structure of claim 1, wherein said second semiconductor oxide portion laterally extends over a greater area than said semiconductor fin.