Circuit device and method of manufacturing the same
First Claim
1. A circuit device comprising:
- a semiconductor element;
a conductive member which is connected to the semiconductor element via a thin metal wire; and
a sealing resin which comprises a resin material mixed with filler particles and which covers the semiconductor element and the thin metal wire, wherein the sealing resin includes a first portion and a second portion, the first portion of the sealing resin below a top portion of the thin metal wire, the second portion of the sealing resin between the top portion of the thin metal wire and a top surface of the sealing resin, and wherein the second portion has a first layer that includes filler particles and a second layer having no filler particles, a thickness of the second layer less than a thickness of the first layer, andwherein a thickness of the second portion of the sealing resin is smaller than a maximum diameter of the filler particles and wherein the second portion is continuous with the first portion.
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Accused Products
Abstract
Provided are a thin circuit device with show-through of thin metal wires prevented and a method of manufacturing the circuit device. A circuit device mainly includes: a substrate including a first substrate and second substrates; pads formed respectively on upper surfaces of the second substrates; a semiconductor element fixed on an upper surface of the first substrate; thin metal wires each connecting the semiconductor elements and a corresponding one of the pads; and a sealing resin with which the semiconductor element and the thin metal wires are covered, and which thereby seals the circuit device with the semiconductor element and the thin metal wires disposed therein. Furthermore, filler particles located in the uppermost portion of the sealing resin are covered with a resin material constituting the sealing resin.
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Citations
20 Claims
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1. A circuit device comprising:
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a semiconductor element; a conductive member which is connected to the semiconductor element via a thin metal wire; and a sealing resin which comprises a resin material mixed with filler particles and which covers the semiconductor element and the thin metal wire, wherein the sealing resin includes a first portion and a second portion, the first portion of the sealing resin below a top portion of the thin metal wire, the second portion of the sealing resin between the top portion of the thin metal wire and a top surface of the sealing resin, and wherein the second portion has a first layer that includes filler particles and a second layer having no filler particles, a thickness of the second layer less than a thickness of the first layer, and wherein a thickness of the second portion of the sealing resin is smaller than a maximum diameter of the filler particles and wherein the second portion is continuous with the first portion. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a circuit device, the method comprising the steps of:
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connecting an electrode formed on an upper surface of a semiconductor element to a conductive member via a thin metal wire; and covering the semiconductor element and the thin metal wire with a sealing resin by injection molding using a mold, the sealing resin including a first portion below a top portion of the thin metal wire, a second portion above the thin metal wire, and a third portion above the second portion, wherein the first portion includes resin material mixed with filler particles, the second portion includes at least some filler particles, and the third portion comprises additional resin material that does not include filler particles; wherein a thickness from the top portion of the thin metal wire to a top surface of the sealing resin is smaller than a maximum diameter of the filler particles. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A circuit device comprising:
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a semiconductor element; a conductive member which is connected to the semiconductor element via a thin metal wire; and a sealing resin which comprises a resin material mixed with filler particles and seals the semiconductor element and the thin metal wire, wherein a thickness of an uppermost portion of the sealing resin is smaller than a maximum diameter of the filler particles, the uppermost portion being defined as a portion of the sealing resin between a top portion of the thin metal wire and a top surface of the sealing resin, the uppermost portion of the sealing resin is continuous with the rest of the sealing resin, and the uppermost portion comprises a top layer having no filler particles and a bottom layer having filler particles, a thickness of the top layer being smaller than a thickness of the bottom layer. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification