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TMR device with novel free layer structure

  • US 9,040,178 B2
  • Filed: 09/22/2008
  • Issued: 05/26/2015
  • Est. Priority Date: 09/22/2008
  • Status: Active Grant
First Claim
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1. A magnetoresistive element in a magnetic device, comprising:

  • (a) a synthetic anti-parallel (SyAP) pinned layer;

    (b) a free layer consisting of (CoFeTb/CoFeB)n, (CoFeTb/CoFeBTb)n,(CoFeTbL/CoFeB)n, or (CoFeTbL/CoFeBTb)n wherein n≧

    2, L is one of Ni, Ti, W, Zr, Hf, or Nb and has a content greater than 0 atomic %, and each of said CoFeB or CoFeBTb layers has a greater thickness than each of said CoFeTb, or CoFeTbL layers in the free layer wherein a boron containing layer alternates with a non-boron containing layer, and all layers in the free layer have at least one non-magnetic element, and;

    (c) a tunnel barrier layer having a first surface that contacts the SyAP pinned layer and a second surface that contacts a CoFeTb, or CoFeTbL layer in said free layer wherein said second surface is opposite said first surface.

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