High light extraction efficiency nitride based light emitting diode by surface roughening
First Claim
Patent Images
1. A light emitting device, comprising:
- a III-nitride light emitting diode (LED) comprised of an active III-nitride layer that emits light formed between n-type and p-type III-nitride layers, wherein;
the III-nitride layers are semi-polar or non-polar III-nitride layers;
at least one surface of the LED is a textured surface;
the textured surface is comprised of at least one conical feature having at least one sloped sidewall that reflects or transmits at least one light ray incident thereon from inside the conical feature; and
the sidewall is inclined, such that each time the light ray is reflected, there is an increased chance of the light ray being transmitted through the sidewall.
0 Assignments
0 Petitions
Accused Products
Abstract
A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
26 Citations
20 Claims
-
1. A light emitting device, comprising:
-
a III-nitride light emitting diode (LED) comprised of an active III-nitride layer that emits light formed between n-type and p-type III-nitride layers, wherein; the III-nitride layers are semi-polar or non-polar III-nitride layers; at least one surface of the LED is a textured surface; the textured surface is comprised of at least one conical feature having at least one sloped sidewall that reflects or transmits at least one light ray incident thereon from inside the conical feature; and the sidewall is inclined, such that each time the light ray is reflected, there is an increased chance of the light ray being transmitted through the sidewall. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method for fabricating a light emitting device, comprising:
-
creating a III-nitride light emitting diode (LED) comprised of a III-nitride active layer that emits light formed between n-type and p-type III-nitride layers, wherein; the III-nitride layers are semi-polar or non-polar III-nitride layers; at least one surface of the LED is a textured surface; the textured surface is comprised of at least one conical feature having at least one sloped sidewall that reflects or transmits at least one light ray incident thereon from inside the conical feature; and the sidewall is inclined, such that each time the light ray is reflected, there is an increased chance of the light ray being transmitted through the sidewall. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
-
20. A method for emitting light, comprising:
-
emitting light from a III-nitride light emitting diode (LED) comprised of a III-nitride active layer formed between n-type and p-type III-nitride layers, wherein; the III-nitride layers are semi-polar or non-polar III-nitride layers; at least one surface of the LED is a textured surface; the textured surface is comprised of at least one conical feature having at least one sloped sidewall that reflects or transmits at least one light ray incident thereon from inside the conical feature; and the sidewall is inclined, such that each time the light ray is reflected, there is an increased chance of the light ray being transmitted through the sidewall.
-
Specification