Manufacturing method for an LED

• US 9,040,328 B2
• Filed: 05/04/2014
• Issued: 05/26/2015
• Est. Priority Date: 06/30/2011
• Status: Expired due to Fees

• Current Assignee: Scienbizip Consulting (Shenzhen) Co., Ltd.
• Original Assignee: Zhongshan Innocloud Intellectual Property Services Co.,Ltd.
• Inventors: Lin, Ya-Wen, Huang, Shih-Cheng, Tu, Po-Min, Huang, Chia-Hung, Yang, Shun-Kuei
• Primary Examiner(s): Yang, Minchul
• Application Number:
  US14/269,189
• Publication Number:
  US 20140242738A1
• Time in Patent Office: 387 Days
• Field of Search: 438/22, 438/31, 438/39, 438/42, 257/E33.001
• US Class Current: 438/31
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

A manufacturing method for an LED includes providing a substrate having a buffer layer and a first N-type epitaxial layer, forming a blocking layer on the first N-type epitaxial layer, and etching the blocking layer to form patterned grooves penetrating the blocking layer to the first N-type epitaxial layer. A second N-type epitaxial layer is then formed on the blocking layer to contact the first N-type epitaxial layer; a light emitting layer, a P-type epitaxial layer and a conductive layer are thereafter disposed on the second N-type epitaxial layer; an N-type electrode is formed to electrically connect with the first N-type epitaxial layer, and a P-type electrode is formed on the conductive layer. The N-type electrode is disposed on the blocking layer and separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact the first N-type epitaxial layer.

Claims

1. A manufacturing method for an LED (light emitting diode), comprising:

providing a substrate having a buffer layer and a first N-type epitaxial layer sequentially disposed on a top face of the substrate;

forming a blocking layer on the first N-type epitaxial layer;

etching the blocking layer to form patterned grooves, wherein the patterned grooves penetrate the blocking layer to the first N-type epitaxial layer;

forming a second N-type epitaxial layer on the blocking layer, the second N-type epitaxial layer contacting the first N-type epitaxial layer via a portion of the second N-type epitaxial layer in the patterned grooves;

forming a light emitting layer, a P-type epitaxial layer and a conductive layer sequentially disposed on the second N-type epitaxial layer; and

forming an N-type electrode to electrically connect with the first N-type epitaxial layer, and a P-type electrode on the conductive layer, the N-type electrode disposed on the blocking layer opposite to the P-type electrode, wherein the N-type electrode is separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact the first N-type epitaxial layer.

2. The manufacturing method for an LED as claimed in claim 1, wherein the buffer layer is made of a III-group nitride compound semiconducting material, and the first N-type epitaxial layer is a III-group nitride compound semiconductor contacting layer.

3. The manufacturing method for an LED as claimed in claim 2, wherein the blocking layer is a III-group nitride compound electron blocking layer.

4. The manufacturing method for an LED as claimed in claim 2, wherein the second N-type epitaxial layer is a III-group nitride compound semiconducting material.

5. The manufacturing method for an LED as claimed in claim 4, wherein the light emitting layer is a III-group nitride compound semiconductor active layer, the P-type epitaxial layer is a III-group nitride compound semiconducting material, and the conductive layer is a transparent conductive layer.

6. The manufacturing method for an LED as claimed in claim 1, wherein the N-type electrode is located on the blocking layer and makes contact with the first N-type epitaxial layer via a portion of the N-type electrode in the patterned grooves of the blocking layer.

7. The manufacturing method for an LED as claimed in claim 1, wherein the N-type electrode is located on the first N-type epitaxial layer.

8. The manufacturing method for an LED as claimed in claim 1, wherein a depression penetrating through the second N-type epitaxial layer, the blocking layer, the light emitting layer and the P-type epitaxial layer is formed for accommodating the N-type electrode therein.

9. The manufacturing method for an LED as claimed in claim 8, wherein the depression occupies an area which is substantially similar to that the N-type electrode occupies.

10. A manufacturing method for an LED, comprising:

providing a substrate having a buffer layer and a first N-type epitaxial layer sequentially disposed on a top face of the substrate;

forming a blocking layer on the first N-type epitaxial layer;

etching the blocking layer to form patterned grooves, wherein the patterned grooves penetrate the blocking layer to the first N-type epitaxial layer;

forming a second N-type epitaxial layer on the blocking layer, the second N-type epitaxial layer contacting the first N-type epitaxial layer via a portion of the second N-type epitaxial layer in the patterned grooves;

forming a light emitting layer, a P-type epitaxial layer and a conductive layer sequentially disposed on the second N-type epitaxial layer; and

forming an N-type electrode to electrically connect with the first N-type epitaxial layer, and a P-type electrode on the conductive layer, wherein the N-type electrode is disposed inside the patterned grooves of the blocking layer to contact the first N-type epitaxial layer.