Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
First Claim
1. A method of manufacturing a solid-state imaging device, comprising:
- forming a gate insulating film lined hole with a desired depth extending from a front surface side of a substrate toward a rear surface side of the substrate;
forming a vertical gate electrode that causes a reading-out portion formed at a surface side of the substrate to read out the signal charges accumulated in a photoelectric conversion unit by embedding an electrode material into the gate insulating film lined hole;
forming a wire layer where a plurality of layers of wires are stacked, on the front surface side of the substrate in an interlayer insulating film;
turning over the substrate after bonding a support substrate onto the wire layer;
removing the gate insulating film formed in the through-hole to a predetermined depth and reducing the thickness of the substrate until the hole extends to the rear surface side of the substrate; and
forming a charge fixing film having negative fixed charges covering the entire rear surface of the substrate and filling the through-hole where the gate insulating film was removed with the charge fixing claim.
1 Assignment
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Accused Products
Abstract
A solid-state imaging device including a substrate, a through-hole, a vertical gate electrode, and a charge fixing film. A photoelectric conversion unit generating signal charges in accordance with the amount of received light is formed in the substrate. The through-hole is formed from a front surface side through a rear surface side of the substrate. The vertical gate electrode is formed through a gate insulating film in the through-hole and reads out the signal charges generated by the photoelectric conversion unit to a reading-out portion. The charge fixing film has negative fixed charges formed to cover a portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate while covering the rear surface side of the substrate.
9 Citations
14 Claims
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1. A method of manufacturing a solid-state imaging device, comprising:
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forming a gate insulating film lined hole with a desired depth extending from a front surface side of a substrate toward a rear surface side of the substrate; forming a vertical gate electrode that causes a reading-out portion formed at a surface side of the substrate to read out the signal charges accumulated in a photoelectric conversion unit by embedding an electrode material into the gate insulating film lined hole; forming a wire layer where a plurality of layers of wires are stacked, on the front surface side of the substrate in an interlayer insulating film; turning over the substrate after bonding a support substrate onto the wire layer; removing the gate insulating film formed in the through-hole to a predetermined depth and reducing the thickness of the substrate until the hole extends to the rear surface side of the substrate; and forming a charge fixing film having negative fixed charges covering the entire rear surface of the substrate and filling the through-hole where the gate insulating film was removed with the charge fixing claim. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method, comprising:
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providing a substrate with oppositely facing front and rear surfaces; forming a gate insulting film lined hole in the substrate extending from the front surface to a predetermined depth; filing the hole with an electrode material; forming a wiring layer on the rear surface, the wiring layer comprised of an insulating film containing wires; reducing a thickness of the substrate until the hole extend to the rear surface; removing a portion of the gate insulating film; and forming a charge fixing film across the rear surface with the charge fixing film extending into that portion of the hole where the gate insulating film was removed. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification