Sensor package and method of forming same

• US 9,040,355 B2
• Filed: 07/11/2012
• Issued: 05/26/2015
• Est. Priority Date: 07/11/2012
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Inventors: Bowles, Philip H., Holm, Paige M., Hooper, Stephen R., Roop, Raymond M.
• Primary Examiner(s): Parker, Kenneth
• Assistant Examiner(s): Lin, John
• Application Number:
  US13/546,902
• Publication Number:
  US 20140015123A1
• Time in Patent Office: 1,049 Days
• Field of Search: 438/113, 438/118, 438/455, 438/456, 438/459, 257/414, 257/685, 257/686, 257/678, 257/704, 257/737, 257/E21.499
• US Class Current: 438/118
• CPC Class Codes: B81B 2201/02 Sensors
• CPC Class Codes: B81B 2203/0127 Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
• CPC Class Codes: B81B 7/0006 Interconnects
• CPC Class Codes: B81B 7/0077 Other packages not provided for in groups B81B7/0035 - B81B7/0074
• CPC Class Codes: B81C 1/0023 Packaging together an electronic processing unit die and a micromechanical structure die MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1461 MEMS

Abstract

A method (70) of forming sensor packages (20) entails providing a sensor wafer (74) having sensors (30) formed on a side (26) positioned within areas (34) delineated by bonding perimeters (36), and providing a controller wafer (82) having control circuitry (42) at one side (38) and bonding perimeters (46) on an opposing side (40). The bonding perimeters (46) of the controller wafer (82) are bonded to corresponding bonding perimeters (36) of the sensor wafer (74) to form a stacked wafer structure (48) in which the control circuitry (42) faces outwardly. The controller wafer (82) is sawn to reveal bond pads (32) on the sensor wafer (74) which are wire bonded to corresponding bond pads (44) formed on the same side (38) of the wafer (82) as the control circuitry (42). The structure (48) is encapsulated in packaging material (62) and is singulated to produce the sensor packages (20).

Claims

1. A method of forming sensor packages comprising:

providing a sensor wafer having a first side and a second side opposite said first side, said first side including sensors positioned within areas on said first side delineated by first bonding perimeters, and said sensor wafer including first bond pads formed on said first side outside of said areas delineated by said first bonding perimeters;

providing a controller wafer having a third side and a fourth side opposite said third side, said third side including control circuitry and second bond pads, and said fourth side including second bonding perimeters;

bonding said second bonding perimeters of said controller wafer to said first bonding perimeters of said sensor wafer to form a stacked wafer structure that includes multiple sensor packages;

removing portions of said controller wafer to reveal said first bond pads formed on said first side of said sensor wafer;

attaching bond wires between corresponding ones of said first and second bond pads; and

singulating said stacked wafer structure to produce said sensor packages.

2. A method as claimed in claim 1 wherein said controller wafer exhibits an initial thickness, and said method further comprises prior to said bonding operation, backgrinding said fourth side of said controller wafer to a final thickness that is less than said initial thickness.

3. A method as claimed in claim 1 further comprising applying bonding material to said fourth side of said controller wafer at said second bonding perimeters.

4. A method as claimed in claim 1 further comprising forming features at said fourth side of said controller wafer prior to said bonding operation, said features being functional components of said sensors located at said first side of said sensor wafer.

5. A method as claimed in claim 4 wherein said features include cavities, and said forming operation comprises forming said cavities extending into said controller wafer from said fourth side such that said cavities are aligned with said sensors following said bonding operation.

6. A method as claimed in claim 4 wherein said features include electrodes, and said forming operation comprises forming said electrodes on said fourth side such that said electrodes are aligned with said sensors following said bonding operation.

7. A method as claimed in claim 1 wherein said sensor wafer exhibits an initial thickness, and said method further comprises backgrinding said second side of said sensor wafer following said bonding operation to a final thickness that is less than said initial thickness.

8. A method as claimed in claim 1 wherein said removing and attaching operations are performed prior to said singulating operation.

9. A method as claimed in claim 1 wherein said controller wafer includes bump pads formed on said third side, and said method further comprises forming conductive elements on said bump pads following said bonding operation.

10. A method as claimed in claim 9 further comprising applying a packaging material over said third side of said controller wafer to encapsulate said control circuitry and to at least partially encapsulate said conductive elements.

11. A method as claimed in claim 1 further comprising mounting sensor dies on said third side of said controller wafer following said bonding operation.

12. A method of forming sensor packages comprising:

providing a sensor wafer having a first side and a second side opposite said first side, said first side including sensors positioned within areas on said first side delineated by first bonding perimeters;

providing a controller wafer having a third side and a fourth side opposite said third side, said third side including control circuitry and said fourth side including second bonding perimeters;

bonding said second bonding perimeters of said controller wafer to said first bonding perimeters of said sensor wafer to form a stacked wafer structure that includes multiple sensor packages;

applying a packaging material over said third side of said controller wafer to encapsulate said control circuitry; and

singulating said stacked wafer structure to produce said sensor packages, said singulating operation being performed following said applying operation.

13. A method of forming sensor packages comprising:

providing a sensor wafer having a first side and a second side opposite said first side, said first side including sensors positioned within areas on said first side delineated by first bonding perimeters, and said first side further including first bond pads positioned outside of said areas;

providing a controller wafer having a third side and a fourth side opposite said third side, said third side including control circuitry and second bond pads, and said fourth side including second bonding perimeters;

bonding said second bonding perimeters of said controller wafer to said first bonding perimeters of said sensor wafer to form a stacked wafer structure that includes multiple sensor packages;

removing portions of said controller wafer to reveal said first bond pads formed on said first side of said sensor wafer;

attaching bond wires between corresponding ones of said first and second bond pads;

applying a packaging material over said third side of said controller wafer to encapsulate said control circuitry and said bond wires; and

following said applying operation, singulating said stacked wafer structure to produce said sensor packages.

14. A method as claimed in claim 13 wherein said controller wafer exhibits an initial thickness, and said method further comprises prior to said bonding operation, backgrinding said fourth side of said controller wafer to a final thickness that is less than said initial thickness.

15. A method as claimed in claim 13 further comprising forming features at said fourth side of said controller wafer prior to said bonding operation, said features being functional components of said sensors located at said first side of said sensor wafer.