THz frequency range antenna

• US 9,040,922 B2
• Filed: 06/04/2010
• Issued: 05/26/2015
• Est. Priority Date: 06/03/2009
• Status: Expired due to Fees

• Current Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Original Assignee: Koninklijke Philips N.V.
• Inventors: Gomez Rivas, Jaime, Giannini, Vincenzo, Berrier, Audrey Anne-Marie, Maier, Stefan Alexander, Matters-Kammerer, Marion, Tripodi, Lorenzo
• Primary Examiner(s): Porta, David
• Assistant Examiner(s): Maupin, Hugh H
• Application Number:
  US13/375,776
• Publication Number:
  US 20120074323A1
• Time in Patent Office: 1,817 Days
• Field of Search: 250/341.1
• US Class Current: 250/341.1
• CPC Class Codes: G01J 3/02 Details
• CPC Class Codes: G01J 3/0237 Adjustable, e.g. focussing
• CPC Class Codes: G01J 3/0259 Monolithic
• CPC Class Codes: G01J 3/42 Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry beam switching arrangements G01J3/08
• CPC Class Codes: G01N 21/3563 for analysing solids; Preparation of samples therefor
• CPC Class Codes: G01N 21/3581 using far infrared light; using Terahertz radiation

Abstract

A THz frequency range antenna is provided which comprises: a semiconductor film (3) having a surface adapted to exhibit surface plasmons in the THz frequency range. The surface of the semiconductor film (3) is structured with an antenna structure (4) arranged to support localized surface plasmon resonances in the THz frequency range.

Claims

1. A THz frequency range antenna comprising:

a semiconductor film having a surface adapted to exhibit surface plasmons in the THz frequency range,

wherein the surface of the semiconductor film is structured to form an antenna structure arranged to support localized surface plasmon resonances in the THz frequency range, the antenna structure having a gap (g) which is controlled for varying at least one dimension thereof.

2. The THz frequency range antenna according to claim 1, wherein the antenna structure comprises at least two elements structured in or on the surface of the semiconductor film and spaced from each other in a direction in parallel to the surface of the semiconductor film by the gap (g).

3. The THz frequency range antenna according to claim 2, wherein the at least one dimension of the gap (g) is the width (Δ

), wherein the width (Δ

) is in the range between 10 nm and 10 μ

m, preferably between 50 nm and 200 nm.

4. The THz frequency range antenna according to claim 1, wherein the antenna structure consists of the same material as the semiconductor film.

5. The THz frequency range antenna according to claim 1, characterized in that a functionalized surface adapted to attach pre-determined molecules is provided in a region around the antenna structure and/or in a region around the gap (g).

6. The THz frequency range antenna according to claim 1, wherein the semiconductor film has a thickness in the range between 0.5 μ

m and 300 μ

m, preferably between 0.5 μ

m and 100 μ

m.

7. The THz frequency range antenna according to claim 1, wherein the semiconductor film is arranged on a substrate which is transparent for electromagnetic radiation in the THz frequency range.

8. The THz frequency range antenna according to claim 1, which is adapted for being inserted between a THz frequency generator and a THz frequency detector.

9. The THz frequency range antenna according to claim 1, wherein the piezoelectric material is used as a piezoelectric substrate or is provided as an piezoelectric intermediate layer between the semiconductor film and the substrate.

10. The THz frequency range antenna according to claim 1, wherein the semiconductor film comprises InSb or InAs as a base material.

11. The THz frequency range antenna according to claim 1, wherein the antenna structure is arranged such that an electric field of the surface plasmon resonances is locally enhanced in the region of the antenna structure.

12. An electronic system operating in the THz frequency range comprising a THz frequency range antenna, said antenna comprising:

a semiconductor film having a surface adapted to exhibit surface plasmons in the THz frequency range,

wherein the surface of the semiconductor film is structured to form an antenna structure arranged to support localized surface plasmon resonances in the THz frequency range, the antenna structure having a gap (g) which is controlled for varying at least one dimension thereof.

13. The electronic system according to claim 12, wherein the system is one of a sensing system, a communication system, an imaging system, a signal processing system, and a light modulating system.

14. A system for distinguishing between a THz signal and background noise, comprising

a modulator comprising a THz frequency range antenna, the modulator being adapted to tune the resonance of surface plasmons in the region of the THz frequency range antenna on and off by varying the gap width with a predetermined modulation rate, and

a detector being controlled by the predetermined modulation rate, wherein the THz frequency range antenna comprises:

a semiconductor film having a surface adapted to exhibit surface plasmons in the THz frequency range,

wherein the surface of the semiconductor film is structured to form an antenna structure arranged to support localized surface plasmon resonances in the THz frequency range, wherein the semiconductor film is provided on a piezoelectric material.

15. A method for tuning the response of a THz frequency range antenna, wherein the method comprises the step:

tuning the response by varying at least one dimension of a gap of the THz frequency range antenna, wherein the THz frequency range antenna comprises;

a semiconductor film having a surface adapted to exhibit surface plasmons in the THz frequency range,

wherein the surface of the semiconductor film is structured to form an antenna structure arranged to support localized surface plasmon resonances in the THz frequency range.