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Semiconductor device and manufacturing method thereof

  • US 9,040,989 B2
  • Filed: 09/09/2013
  • Issued: 05/26/2015
  • Est. Priority Date: 12/08/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first gate electrode;

    an oxide semiconductor layer over the first gate electrode, the oxide semiconductor layer including a crystal region in which c-axis is aligned in a direction, wherein an angle between the direction and a surface of the oxide semiconductor layer is within a range of 80°

    to 100°

    ;

    a second gate electrode over the oxide semiconductor layer;

    a nitride insulating layer containing hydrogen over the oxide semiconductor layer.

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