Light emitting diode component comprising polysilazane bonding layer

• US 9,041,034 B2
• Filed: 10/25/2011
• Issued: 05/26/2015
• Est. Priority Date: 11/18/2010
• Status: Active Grant

• Current Assignee: 3M Innovative Properties Company (3M Company)
• Original Assignee: 3M Innovative Properties Company (3M Company)
• Inventors: Mao, Guoping, Znameroski, Stephen J., Yang, Yu, Smith, Terry L.
• Primary Examiner(s): Kim, Su C
• Application Number:
  US13/876,373
• Publication Number:
  US 20130221393A1
• Time in Patent Office: 1,309 Days
• Field of Search: 257/79, 257/98, 257/753, 257/783, 257/E33.001, 257/E33.06, 257/E33.064, 438/31, 438/35, 438/38, 438/118
• US Class Current: 257/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/502 Wavelength conversion materials

Abstract

In one embodiment, a semiconductor component, such as a wavelength converter wafer, is described wherein the wavelength converter is bonded to an adjacent inorganic component with a cured bonding layer comprising polysilazane polymer. The wavelength converter may be a multilayer semiconductor wavelength converter or an inorganic matrix comprising embedded phosphor particles. In another embodiment, the semiconductor component is a pump LED component bonded to an adjacent component with a cured bonding layer comprising polysilazane polymer. The adjacent component may the described wavelength converter(s) or another component comprised of inorganic material(s) such as a lens or a prism. Also described are methods of making semiconductor components such as wavelength converters and LED'"'"'s.

Claims

1. A semiconductor component comprising a wavelength converter bonded to an adjacent inorganic component with a cured bonding layer comprising a polysilazane polymer.

2. The semiconductor component of claim 1 wherein the wavelength converter is a multilayer semiconductor wavelength converter or an inorganic matrix comprising embedded phosphor particles.

3. The semiconductor component of claim 1 wherein the wavelength converter is a multilayer semiconductor wavelength converter comprising II-VI semiconductor material.

4. The semiconductor component of claim 1 wherein the multilayer semiconductor wavelength converter absorbs a portion of blue light to produce longer wavelengths.

5. The semiconductor component of claim 1 wherein the bonding layer further comprises up to 10 wt-% of free-radically polymerizable monomer.

6. The semiconductor component of claim 5 wherein the free-radically polymerizable monomer is a (meth)acrylate monomer.

7. The semiconductor component of claim 6 wherein the (meth)acrylate monomer is a multi-(meth)acrylate monomer comprising at least three (meth)acrylate groups.

8. The semiconductor component of claim 1 wherein the adjacent component is a cover sheet.

21. The semiconductor component of claim 1 wherein the polysilazane comprises a linear, branched, or cyclic backbone comprising at least one Si—

N linkage and at least one ethylenically unsaturated group or a SiH group.

9. A light emitting diode (LED), comprising:

a pump LED component bonded to an adjacent component with a cured bonding layer comprising polysilazane polymer.

10. The light emitting diode (LED) of claim 9 wherein the LED component and adjacent component are comprised of a material which is stable at temperature greater than 150°

C.

11. The light emitting diode (LED) of claim 9 wherein the LED component and adjacent component are comprised of one or more inorganic materials.

12. The light emitting diode (LED) of claim 9 wherein the pump LED comprises III-V semiconductor material.

13. The light emitting diode (LED) of claim 9 wherein the adjacent component is a wavelength converter, lens, or prism.

14. The light emitting diode (LED) of claim 13 wherein the wavelength converter is a multilayer semiconductor wavelength converter or an inorganic matrix comprising embedded phosphor particles.

15. The light emitting diode (LED) of claim 9 wherein the light emitting diode (LED) further comprise a cover sheet.

16. The light-emitting diode (LED) of claim 13 where the wavelength converter is bonded to the cover sheet with a cured bonding layer comprising a polysilazane polymer.

22. The light emitting diode (LED) of claim 9 wherein the polysilazane comprises a linear, branched, or cyclic backbone comprising at least one Si—

N linkage and at least one ethylenically unsaturated group or a SiH group.

17. An electronic illuminated display comprising:

a light-transmissive inorganic component bonded to an adjacent inorganic component with a cured bonding layer comprising a polysilazane polymer.

18. The electronic illuminated display of claim 17 wherein the light-transmissive inorganic component is the light emitting diode (LED) of claim 9.

23. The electronic illuminated display of claim 17 wherein the polysilazane comprises a linear, branched, or cyclic backbone comprising at least one Si—

N linkage and at least one ethylenically unsaturated group or a SiH group.

19. A method of making a semiconductor component comprising:

bonding a wavelength converter wafer, pump LED component, or combination thereof to an adjacent component with a bonding layer comprising polysilazane polymer.

20. The method of claim 19 wherein a wavelength converter is bonded to an inorganic light-transmissive cover sheet.

24. The method of making a semiconductor component of claim 19 wherein the polysilazane comprises a linear, branched, or cyclic backbone comprising at least one Si—

N linkage and at least one ethylenically unsaturated group or a SiH group.