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Protection device for normally-on and normally-off high electron mobility transistors

  • US 9,041,066 B2
  • Filed: 10/16/2013
  • Issued: 05/26/2015
  • Est. Priority Date: 06/04/2012
  • Status: Active Grant
First Claim
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1. A transistor device, comprising:

  • a compound semiconductor body;

    a normally-on high electron mobility field effect transistor (HEMT) formed in the compound semiconductor body and having a source, a drain, a gate, and a threshold voltage; and

    a protection device monolithically integrated in the same compound semiconductor body as the normally-on HEMT and having a source and a drain each shared with the normally-on HEMT, a gate and a positive threshold voltage that is less than a difference of the threshold voltage of the normally-on HEMT and a gate voltage used to turn off the normally-on HEMT, the protection device operable to conduct current in a reverse direction when the normally-on HEMT is switched off.

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